Method of separating electronic devices having a back layer and apparatus

A method for batch singulating a semiconductor wafer comprising:

• providing the semiconductor wafer comprising:
• a plurality of die separated from each other by spaces,
• a first major surface,
• a second major surface opposite to the first major surface, and
• a layer of material fixed to the second major surface;
• placing the semiconductor wafer onto a carrier substrate, wherein the layer of material is adjacent the carrier substrate;
• after placing the semiconductor wafer onto the carrier substrate, removing portions the semiconductor wafer through the spaces to form singulation lines comprising gaps and to expose portions of the layer of material that overlap the singulation lines;
• and
• separating the exposed portions of the layer of material that overlap the singulation lines by simultaneously applying a pressure to all of the exposed portions with a fluid.

A method for separating a layer of material on a wafer, comprising:

• providing the wafer comprising a plurality of electronic die formed as part of the wafer and separated from each other by singulation lines, wherein:
• the wafer has a first major surface and a second major surface opposite to the first major surface,
• a layer of material atop the second major surface,
• the singulation lines extend from the first major surface into the wafer and terminate proximate to the layer of material so that portions of the layer of material overlap the singulation lines, and
• the wafer is attached to a carrier substrate;
• and
• separating the portions of the layer of material that overlap the singulation lines using a fluid to apply a pressure to the entire layer of material.