Methods and apparatus for filling a feature disposed in a substrate

A method of filling a feature disposed in a substrate, comprising:

• (a) depositing a metal within the feature to a first predetermined thickness in a physical vapor deposition (PVD) chamber;
• (b) depositing the metal within the feature to a second predetermined thickness in a first chemical vapor deposition (CVD) chamber;
• (c) etching via a plasma process or a thermal process without the use of a plasma the metal deposited in (b) to remove an overhang of the metal at a top of the feature in an etch chamber;
• and
• (d) subsequent to (c), filling the feature with the metal in a second CVD chamber;
• and
• (e) etching the metal deposited in (a) to remove an overhang of the metal at the top of the feature in a second etch chamber prior to (b), wherein each of (c) and (e) comprises:
• (1) oxidizing an exposed layer of the metal deposited on the substrate using an oxidizing precursor;
• (2) purging the oxidizer precursor from the etch chamber;
• (3) flowing a reducing agent into the etch chamber to react with the oxidized layer and form an organometallic product and etch away the oxidized layer;
• and
• (4) purging the organometallic product from the etch chamber.