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US 10,950,496 B2Granted
Microelectronic devices comprising manganese-containing conductive structures, and related electronic systems
AssigneeMicron Technology, Inc.
InventorKentaro Ishii
Life of this patent
Estimating the term…
Abstract
A microelectronic device comprises a first conductive material comprising copper, a conductive plug comprising tungsten in electrical communication with the first conductive material, and manganese particles dispersed along an interface between the first conductive material and the conductive plug. Related electronic systems and related methods are also disclosed.
Claims22
A microelectronic device, comprising:
- a first conductive material;
- a second conductive material in electrical communication with the first conductive material;
- a barrier material around the second conductive material;
- and
- manganese particles at an interface between the first conductive material and the barrier material, the first conductive material comprising a greater atomic percent of the manganese particles proximate the barrier material than in other portions of the first conductive material.
2 more elements
A microelectronic device, comprising:
- a barrier material in electrical communication with a first conductive material, the barrier material having a varying thickness along a length thereof;
- a second conductive material in electrical communication with the barrier material, the varying thickness of the barrier material located between the first conductive material and the second conductive material;
- and
- manganese particles at an interface between the barrier material and the first conductive material.
1 more element
An electronic system, comprising:
- an input device;
- an output device;
- a processor device operably coupled to the input device and the output device;
- and
- a memory device operably coupled to the processor device and comprising:
- an interconnect structure;
- a conductive contact in electrical communication with the interconnect structure;
- a barrier material between the interconnect structure and the conductive contact;
- and
- manganese particles within the interconnect structure at an interface between the barrier material and the interconnect structure.
7 more elements
A microelectronic device, comprising:
- a first conductive material;
- a second conductive material in electrical communication with the first conductive material;
- a barrier material around the second conductive material, a thickness of the barrier material non-uniform between the first conductive material and the second conductive material;
- and
- manganese particles at an interface between the first conductive material and the barrier material.
2 more elements
A microelectronic device, comprising:
- a first conductive material;
- a second conductive material in electrical communication with the first conductive material and having an aspect ratio within a range from about 1:1 to about 30:1;
- a barrier material around the second conductive material;
- and
- manganese particles at an interface between the first conductive material and the barrier material.
2 more elements
A microelectronic device, comprising:
- a first conductive material;
- a second conductive material in electrical communication with the first conductive material;
- a barrier material comprising titanium around the second conductive material;
- and
- manganese particles at an interface between the first conductive material and the barrier material.
2 more elements
Dependencies are inferred from the claim text.