Semiconductor device having isolation structures with different thicknesses
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Ta Wu, Chii-Ming Wu, Sen-Hong Syue, Cheng-Po Chau
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Abstract
A semiconductor structure includes a semiconductor substrate, a first fin, a second fin, a first isolation structure, and a second isolation structure. The semiconductor substrate has a memory device region and a logic core region. The first fin is in the memory device region of the semiconductor substrate. The second fin is in the logic core region of the semiconductor substrate. The first isolation structure is around the first fin. The second isolation structure is around the second fin, and a thickness of the first isolation structure is different from a thickness of the second isolation structure.
Claims20
A structure, comprising:
- a semiconductor substrate having a first region and a second region;
- a base portion extending from the second region of the semiconductor substrate with a first height, wherein the base portion has opposite sidewalls;
- a first fin extending from the first region of the semiconductor substrate with a second height;
- a second fin extending from the base portion with a third height, wherein a bottom of a sidewall of the first fin and a bottom of a sidewall of the second fin are at different heights, the base portion is wider than the second fin;
- a first isolation structure around the first fin;
- and
- a second isolation structure around the second fin and in contact with the sidewalls of the base portion, wherein a thickness of the first isolation structure is different from a thickness of the second isolation structure, and a top of the first isolation structure is higher than a top of the second isolation structure.
A structure, comprising:
- a semiconductor substrate having a first region and a second region;
- a first fin extending from the first region of the semiconductor substrate with a first height;
- a second fin extending from the second region of the semiconductor substrate with a second height;
- a third fin adjacent the second fin and extending from the semiconductor substrate with a third height, wherein the third height of the third fin is greater than the first height of the first fin and less than the second height of the second fin;
- a first isolation structure around the first fin;
- and
- a second isolation structure around the second fin, wherein a thickness of the first isolation structure is different from a thickness of the second isolation structure, wherein a bottom surface of the second isolation structure has a first portion extending laterally from a bottom of a sidewall of the second fin and a second portion extending laterally from a bottom of a sidewall of the third fin, the first and second portions of the bottom surface of the second isolation structure are at different heights, and a top of the second isolation structure is higher than a top of the first isolation structure.
A structure, comprising:
- a semiconductor substrate;
- a first fin over the semiconductor substrate;
- a second fin over the semiconductor substrate, wherein a width of the first fin is different from a width of the second fin;
- a third fin over the semiconductor substrate, wherein a bottom of the first fin, a bottom of the second fin, and a bottom of the third fin are at different heights;
- a first isolation structure around the first fin;
- and
- a second isolation structure around the second fin, wherein a thickness of the first isolation structure is different from a thickness of the second isolation structure, and a top of the first isolation structure is higher than a top of the second isolation structure.
Dependencies are inferred from the claim text.