US 10,950,460 B2 · Method utilizing using post etch pattern encapsulation

Abstract

A process is provided in which etched layer(s) are protected from residues or defects caused by or resulting from exposure to atmospheric conditions. Protection is provided through the formation of an encapsulation layer post etch. In one embodiment, the encapsulation is provided by a thin layer formed in an atomic layer deposition (ALD) process. The thin layer prevents the etched layer(s) from exposure to air. This encapsulation process may take place after the etch process thus allowing for substrates to be subsequently exposed to atmospheric conditions with little or no queue time constraints being needed for staging subsequent wet clean processing steps. In one embodiment, the encapsulation process may be performed with no vacuum break between the etch process and the encapsulation process. In one embodiment, the encapsulation film is compatible with subsequent wet process steps and can be removed during this wet process steps without adverse effects.

Claims21

Dependent claims

A method of processing a substrate so as to extend a queue time between at least an etch step and a second process step, the method comprising:

the etch step including etching at least one layer to form a patterned structure on the substrate, the patterned structure being sensitive to exposure to atmospheric conditions, the patterned structure having a plurality of exposed surfaces which are exposed after the etching;
encapsulating at least a portion of the plurality of exposed surfaces with an encapsulation layer, the encapsulation layer allowing for an extended queue time between the etch step and the second process step to cover the at least a portion of the plurality of exposed surfaces;
after the encapsulation, exposing the substrate having the encapsulation layer thereon to atmospheric conditions,
the second process step including after the exposing to atmospheric conditions, removing the encapsulation layer as part of the second process step and wherein during the removing, all exposed surfaces exposed after the etching and covered by the encapsulation layer become exposed again.

1 more element

Dependencies are inferred from the claim text.

Method utilizing using post etch pattern encapsulation

Life of this patent

Method utilizing using post etch pattern encapsulation

Life of this patent

Abstract

Claims21