Substrate processing device, manufacturing method for semiconductor device, and reaction tube

A substrate processing apparatus comprising:

• a substrate holding member configured to hold a plurality of substrates;
• a reaction tube configured to accommodate the substrate holding member and process the substrates;
• a processing gas supply part configured to supply at least two kinds of processing gases into the reaction tube;
• and
• an exhaust part configured to exhaust an internal atmosphere of the reaction tube,
• wherein the reaction tube includes:
• a cylindrical portion having an upper end that is closed and a lower end that is opened;
• a gas supply area which is formed on and outside a side wall of the cylindrical Portion;
• and
• a gas exhaust area which is formed on and outside the side wall of the cylindrical portion at a position opposite a part of the gas supply area,
• wherein the gas supply area is divided into a plurality of spaces, at least one of which faces to an exhaust opening for exhausting the internal atmosphere of the cylindrical portion, and the gas supply area includes:
• a first plurality of openings formed at a boundary wall between the gas supply area and the cylindrical portion, and configured to supply a first gas of the processing gases simultaneously to the respective substrates;
• a second plurality of openings configured to supply a second gas of the processing gases simultaneously to the respective substrates;
• one or more second gas nozzles that elongate in a direction of arrangement of the plurality of substrates in one of the spaces, have openings positioned respectively on the second plurality of openings, and are configured to supply the second gas;
• and
• a first gas nozzle having a hole opened in another one of the spaces and configured to supply the first gas wherethrough
• wherein the second gas and first gas mix with each other in the cylindrical portion without mixing in the gas supply area, and
• wherein the exhaust opening is formed at a boundary wall between the gas exhaust area and the cylindrical portion.

A substrate processing apparatus comprising

• a substrate holding member configured to hold a plurality of substrates;
• a reaction tube configured to accommodate the substrate holding member and process the substrates;
• a processing gas supply part configured to supply at least two kinds of processing gases into the reaction tube;
• and
• an exhaust part configured to exhaust an internal atmosphere of the reaction tube,
• wherein the reaction tube includes:
• a cylindrical portion having an upper end that is closed and a lower end that is opened;
• a gas supply area which is formed on and outside a side wall of the cylindrical portion;
• and
• a gas exhaust area which is formed on and outside the side wall of the cylindrical portion at a position opposite a part of the gas supply area,
• wherein the gas supply area includes:
• a first plurality of openings formed at a boundary wall between the gas supply area and the cylindrical portion, and configured to supply a first gas of the processing gases simultaneously to the respective substrates;
• and
• a second plurality of openings configured to supply a second gas of the processing gases simultaneously to the respective substrates;
• wherein the second gas and first gas mix with each other in the cylindrical portion without mixing in the gas supply area,
• wherein an exhaust opening for exhausting the internal atmosphere of the cylindrical portion is formed at a boundary wall between the gas exhaust area and the cylindrical portion,
• wherein the gas supply area is divided by two inner walls into three of the spaces, at least one of which faces to the exhaust opening,
• wherein a center space of the three spaces fluidically communicates directly with the second plurality of openings, and
• wherein two of the three spaces that are adjacent to the center space fluidically communicate directly with the first plurality of openings, and the number of the first plurality of openings formed for each of the two of the three spaces correspond to the number of the plurality of substrates in a direction of arrangement of the plurality of substrates.