Seasoning method and etching method
AssigneeTokyo Electron Limited
InventorsYoshio Ishikawa, Takashi Enomoto, Yutaka Osada
Life of this patent
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Abstract
A time required to return an inside of the chamber after performing maintenance of the inside of the chamber into a state prior to the maintenance can be shortened. A seasoning method includes a first dry cleaning process of cleaning the inside of the chamber by supplying an O2 gas into the chamber and generating plasma of the O2 gas within the chamber; and a second dry cleaning process of seasoning, after the first dry cleaning process, the inside of the chamber by supplying a processing gas containing fluorine into the chamber and generating plasma of the processing gas within the chamber.
Claims10
A seasoning method, comprising:
- putting a chamber in a state of a vacuum and then breaking the vacuum of the chamber;
- cleaning an inside of the chamber after breaking the vacuum of the chamber;
- returning the chamber back into the vacuum;
- a first process of cleaning the inside of the chamber by supplying an O2 gas into the chamber and generating plasma of the O2 gas within the chamber and removing a moisture of the component within the chamber;
- and
- after the first process, a second process of seasoning the inside of the chamber by supplying a processing gas containing fluorine into the chamber and generating plasma of the processing gas within the chamber and fluorinating a surface of the component within the chamber,
- wherein the first process comprises:
- a third process of supplying the O2 gas into the chamber;
- a fourth process of generating the plasma of the O2 gas supplied into the chamber;
- and
- a fifth process of stopping the supplying of the O2 gas and exhausting the O2 gas from the chamber,
- wherein the third process to the fifth process are repeated two or more times in the first process, and
- the processing gas consists of a Ar gas, a NF3 gas and a O2 gas.
An etching method, comprising:
- putting a chamber in a state of a vacuum and then breaking the vacuum of the chamber;
- cleaning an inside of the chamber after breaking the vacuum of the chamber;
- returning the chamber back into the vacuum;
- a seasoning process of seasoning the inside of the chamber after the cleaning of the inside of the chamber;
- carrying an etching target wafer into the chamber;
- and
- an etching process of etching the etching target wafer carried into the chamber after the seasoning process is performed,
- wherein the seasoning process comprises:
- a first process of cleaning an inside of the chamber by supplying an O2 gas into the chamber and generating plasma of the O2 gas within the chamber and removing a moisture of the component within the chamber;
- and
- after the first process, a second process of seasoning the inside of the chamber by supplying a processing gas containing fluorine into the chamber and generating plasma of the processing gas within the chamber and fluorinating a surface of the component within the chamber,
- wherein the first process comprises:
- a third process of supplying the O2 gas into the chamber;
- a fourth process of generating the plasma of the O2 gas supplied into the chamber;
- and
- a fifth process of stopping the supplying of the O2 gas and exhausting the O2 gas from the chamber,
- wherein the third process to the fifth process are repeated two or more times in the first process, and
- the processing gas consists of a Ar gas, a NF3 gas and a O2 gas.
Dependencies are inferred from the claim text.