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US 10,950,450 B2Granted
Silicide films through selective deposition
AssigneeApplied Materials, Inc.
InventorsSwaminathan Srinivasan, Abhijit Basu Mallick, Nicolas Breil
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Abstract
Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.
Claims20
A selective deposition method comprising:
- exposing a substrate to a blocking compound to selectively form a blocking layer on a second dielectric surface, the substrate comprising a first semiconductor surface and the second dielectric surface;
- exposing the substrate to a titanium precursor to selectively deposit a Ti-containing layer on the first surface over the second surface;
- exposing the substrate to a silicon precursor to selectively deposit a Si-containing layer on the first surface over the second surface;
- and
- annealing the substrate to form a modified first surface comprising titanium and silicon.
2 more elements
A selective deposition method comprising:
- exposing a substrate with a substrate surface comprising a first semiconductor surface and a second dielectric surface to a blocking compound to selectively form a blocking layer on the second surface over the first surface;
- exposing the substrate surface to a titanium precursor to selectively deposit a Ti-containing film on the first surface over the second surface;
- and
- annealing the substrate to form a modified first surface comprising titanium and silicon.
1 more element
A selective deposition method comprising:
- exposing a substrate with a substrate surface comprising a first semiconductor surface and a second dielectric surface to a blocking compound to selectively form a blocking layer on the second surface over the first surface;
- exposing the substrate surface to a metal precursor to selectively deposit a metal film on the first surface over the second surface, the metal precursor comprising one or more of Ti, Zr, Hf or Ta;
- and
- heating the substrate to form a modified first surface comprising metal and silicon.
1 more element
Dependencies are inferred from the claim text.