Film quality control in a linear scan physical vapor deposition process
AssigneeApplied Materials, Inc.
InventorsBencherki Mebarki, Joung Joo Lee, Xianmin Tang
Life of this patent
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Abstract
Methods and apparatus for control of the quality of films deposited via physical vapor deposition are provided herein. In some embodiments, a method of depositing a film using linear scan physical vapor deposition includes: determining a deposition rate of a material to be deposited on a substrate in a linear scan physical vapor deposition process; calculating a scan rate of the substrate to achieve deposition of the material to a desired thickness in a single pass when deposited at the deposition rate; and performing the linear scan physical vapor deposition process while moving the substrate at the calculated scan rate.
Claims16
A method of depositing a film using linear scan physical vapor deposition, comprising:
- determining a deposition rate of a material to be deposited on a substrate in a linear scan physical vapor deposition process which includes a given set of process parameters that yields the deposition rate;
- calculating a scan rate of the substrate to achieve deposition of the material to a desired thickness in a single pass when deposited at the deposition rate;
- and
- performing the linear scan physical vapor deposition process while moving the substrate at the calculated scan rate,
- wherein the given set of process parameters comprises at least one of pressure, substrate temperature, flow rates of process gases, DC or RF power provided to a target, substrate bias levels, and material characteristics including at least one of a sticking coefficient of the material and an interaction of the material being deposited with an underlying material or materials of the substrate.
A method of depositing a film using linear scan physical vapor deposition, comprising:
- determining a deposition rate of a material to be deposited on a substrate in a linear scan physical vapor deposition process;
- calculating a scan rate of the substrate to achieve deposition of the material to a desired thickness in a single pass when deposited at the deposition rate;
- and
- performing the linear scan physical vapor deposition process while moving the substrate at the calculated scan rate, wherein calculating the scan rate of the substrate is based in part on a sheet resistivity of the material relative to the substrate, and
- wherein the method further comprises moving the substrate at the calculated scan rate of about 1 mm/second to about 50 mm/second so that a resultant film of the deposited material on the substrate has a sheet resistance of about hundreds ohm per square to about 50,000 ohm per square.
An apparatus for depositing a film using linear scan physical vapor deposition, comprising:
- a linear PVD source configured to perform a linear scan physical vapor deposition process, which includes a given set of process parameters that yields the deposition rate, and to provide a stream of material flux comprising material to be deposited on a substrate at a determined deposition rate;
- and
- a substrate support having a support surface to support the substrate and configured to move relative to the linear PVD source at a calculated scan rate of the substrate to achieve deposition of the material to a desired thickness in a single pass when deposited at the deposition rate,
- wherein the given set of process parameters comprises at least one of pressure, substrate temperature, flow rates of process gases, DC or RF power provided to a target, substrate bias levels, and material characteristics including at least one of a sticking coefficient of the material and an interaction of the material being deposited with an underlying material or materials of the substrate.
An apparatus for depositing a film using linear scan physical vapor deposition, comprising:
- a linear PVD source configured to perform a linear scan physical vapor deposition process and to provide a stream of material flux comprising material to be deposited on a substrate at a determined deposition rate;
- and
- a substrate support having a support surface to support the substrate and configured to move relative to the linear PVD source at a calculated scan rate of the substrate to achieve deposition of the material to a desired thickness in a single pass when deposited at the deposition rate, wherein the calculated scan rate of the substrate is calculated based in part on a sheet resistivity of the material relative to the substrate, and
- wherein the substrate support is configured to move the substrate is moved at a scan rate of about 1 mm/second to about 50 mm/second so that a resultant film of the deposited material on the substrate has a sheet resistance of about hundreds ohm per square to about 50,000 ohm per square.
A method of depositing a film using linear scan physical vapor deposition, comprising:
- determining a deposition rate of a material to be deposited on a substrate in a linear scan physical vapor deposition process, wherein;
- calculating a scan rate of the substrate to achieve deposition of the material to a desired thickness in a single pass when deposited at the deposition rate, wherein the scan rate is calculated using a sticking coefficient of the material to be deposited;
- and
- performing the linear scan physical vapor deposition process using a given set of process parameters while moving the substrate at the calculated scan rate.
Dependencies are inferred from the claim text.