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AssigneeFuji Electric Co., Ltd.
InventorsHiroshi Takishita, Takashi Yoshimura, Takahiro Tamura, Yuichi Onozawa, Akio Yamano
Estimating the term…
Provided is a semiconductor device including: a semiconductor substrate doped with an impurity; a front-surface-side electrode provided at a side of a front surface of the semiconductor substrate; and a back-surface-side electrode provided at a side of a back surface of the semiconductor substrate; wherein the semiconductor substrate includes: a peak region arranged at the side of the back surface of the semiconductor substrate and having one or more peaks of an impurity concentration; a high concentration region arranged closer to the front surface than the peak region and having an impurity concentration more gently sloped than the one or more peaks; and a low concentration region arranged closer to the front surface than the high concentration region and having an impurity concentration lower than the impurity concentration of the high concentration region and a substrate concentration of the semiconductor substrate.
A manufacturing method of a semiconductor device including a semiconductor substrate, the semiconductor substrate including a peak region arranged at a side of a back surface of the semiconductor substrate and having one or more peaks of an impurity concentration and a high concentration region arranged closer to a front surface than the peak region and having an impurity concentration distribution more gently sloped than the one or more peaks, the manufacturing method of a semiconductor device comprising:
A manufacturing method of a semiconductor device including a semiconductor substrate, the semiconductor substrate including a peak region arranged at a side of a back surface of the semiconductor substrate and having one or more peaks of an impurity concentration and a high concentration region arranged closer to a front surface than the peak region and having an impurity concentration distribution more gently sloped than the one or more peaks, the manufacturing method of a semiconductor device comprising:
Dependencies are inferred from the claim text.