Deposition of metal silicide layers on substrates and chamber components

A processing chamber, comprising:

• a chamber body having a chamber volume defined within;
• a substrate support disposed within the chamber volume;
• a lid coupled to the chamber body;
• and
• a gas applicator fluidly connected to the chamber volume through the lid, the gas applicator comprising:
• a tubular body;
• a passage formed through the tubular body, the passage fluidly coupled to the chamber volume;
• a first cross-hole formed through the tubular body and configured to deliver a first gas into the passage;
• and
• a second cross-hole formed through the tubular body and spaced axially below the first cross-hole relative to a centerline of the tubular body and configured to deliver a second gas into the passage.

A gas distribution system, comprising:

• a lid;
• an output manifold disposed below the lid;
• an isolator disposed below the output manifold;
• and
• a gas applicator disposed within the output manifold, the gas applicator comprising:
• a tubular body;
• a passage formed through the tubular body;
• a first cross-hole formed through the tubular body and configured to deliver a first gas into the passage;
• and
• a second cross-hole formed through the tubular body and spaced axially below the first cross-hole relative to a centerline of the tubular body and configured to deliver a second gas into the passage.