Methods to reshape spacers for multi-patterning processes using thermal decomposition materials
AssigneeTokyo Electron Limited
InventorsYuki Kikuchi, Toshiharu Wada, Kaoru Maekawa, Akiteru Ko
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Abstract
Embodiments are disclosed that improve etch uniformity during multi-patterning processes for the manufacture of microelectronic workpieces by reshaping spacers using thermal decomposition materials as a protective layer. Because the thermal decomposition material can be removed through thermal treatment processes without requiring etch processes, spacers can be reshaped with no spacer profile change or damage while suppressing undesired gouging differences in underlying layers and related degradation in etch uniformity.
Claims17
A method to improve etch uniformity of an underlying layer for processing of microelectronic workpieces, the method comprising:
- providing a substrate;
- providing a material layer over the substrate;
- performing a self-aligned multi-patterning (SAMP) process to form spacers on the material layer;
- forming protective plugs between the spacers using a thermal decomposition material;
- reshaping the spacers;
- removing the thermal decomposition material using a thermal treatment;
- and
- after removing the thermal decomposition material, etching one or more parts of the material layer;
- wherein a rate for the removing is controlled by adjusting at least one of temperature or pressure for the thermal treatment.
A method to improve etch uniformity of an underlying layer for processing of microelectronic workpieces, the method comprising:
- providing a substrate;
- providing a material layer over the substrate;
- performing a self-aligned multi-patterning (SAMP) process to form spacers on the material layer;
- forming protective plugs between the spacers using a thermal decomposition material;
- reshaping the spacers;
- removing the thermal decomposition material using a thermal treatment;
- and
- after removing the thermal decomposition material, etching one or more parts of the material layer;
- wherein the thermal decomposition material comprises at least one of urethane, polymethyl methacrylate (PMMA), or a monomer.
A method to improve etch uniformity of an underlying layer for processing of microelectronic workpieces, comprising:
- providing a substrate with a material layer;
- performing a self-aligned multi-patterning (SAMP) process to form spacers on the material layer;
- forming protective plugs between the spacers using a thermal decomposition material;
- reshaping the spacers;
- and
- removing the thermal decomposition material using a thermal treatment, wherein the thermal decomposition material comprises an ashing-less coating (ALC) material.
A method to improve etch uniformity of an underlying layer for processing of microelectronic workpieces, the method comprising:
- providing a substrate;
- providing a material layer over the substrate;
- performing a self-aligned multi-patterning (SAMP) process to form spacers on the material layer;
- forming protective plugs between the spacers using a thermal decomposition material;
- reshaping the spacers;
- removing the thermal decomposition material using a thermal treatment;
- and
- after removing the thermal decomposition material, etching one or more parts of the material layer;
- wherein the forming of the protective plugs comprises:
- forming a layer of the thermal decomposition material over the substrate, the material layer, and the spacers such that the spacers are covered by the layer of the thermal decomposition material;
- and
- performing an etch back of a part of the layer of the thermal decomposition material such that top portions of the spacers are exposed above remaining parts of the layer of the thermal decomposition material, which remain after etching back the part of the layer of the thermal decomposition material, wherein the remaining parts of the layer of the thermal decomposition material form the protective plugs which are disposed between the spacers and above the material layer during the reshaping of the spacers, and wherein the reshaping of the spacers comprises reshaping of the exposed top portions of the spacers with an etch process.
Dependencies are inferred from the claim text.