Patterning directly on an amorphous silicon hardmask
AssigneeInternational Business Machines Corporation
InventorsAbraham Arceo de la Pena, Ekmini Anuja De Silva, Nelson Felix
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AssigneeInternational Business Machines Corporation
InventorsAbraham Arceo de la Pena, Ekmini Anuja De Silva, Nelson Felix
Estimating the term…
The invention herein includes enhancing the surface of an amorphous silicon hardmask through implantation of nonpolar, hydrophobic elements, resulting in increased hydrophobicity and increased resist adhesion of the amorphous silicon surface. According to the invention, implanting the hydrophobic elements may involve introduction of the hydrophobic elements into the surface of the amorphous silicon by way of low energy implantation and plasma treatment. The implanted hydrophobic element may be Boron, Xenon, Fluorine, Phosphorus, a combination thereof, or other hydrophobic elements. According to the invention, the surface of the amorphous silicon is enhanced with 10-15% hydrophobic element, however in other embodiments, this composition may be adjusted as needed. In any case, however, the invention herein includes maintaining an etch selectivity of the bulk amorphous silicon hardmask.
A method for patterning a resist layer on an amorphous silicon hardmask in semiconductor devices, the method comprising:
A method for increasing amorphous silicon hardmask resist adhesion, the method comprising:
Dependencies are inferred from the claim text.