Pattern forming method

A semiconductor device manufacturing method comprising:

• forming a guide pattern on an underlying film;
• forming a block copolymer film covering the guide pattern on the underlying film, the block copolymer film including a first polymer and a second polymer;
• forming a microphase-separation pattern including first portions made of the first polymer and second portions made of the second polymer by subjecting the block copolymer film to microphase separation, the first portions and the second portions being alternately arranged;
• measuring a position of the guide pattern by using a scanning probe microscope;
• measuring a position of at least one of the first portions or at least one of the second portions by using a scanning probe microscope;
• determining whether a misalignment amount of the first portions or the second portions with respect to the guide pattern is within a first range, based on the measured position of the at least one of the first portions or at least one of the second portions and the measured position of the guide pattern;
• removing the first portions or the second portions, when it is determined that the misalignment amount is within the first range;
• and
• etching the underlying film by using the remained first portions or the remained second portions as a mask.