Array substrate manufacturing using fluorine and hydrogenation processes

#This application is a National Phase of PCT Patent Application No. PCT/CN2019/079192 having International filing date of Mar. 22, 2019, which claims the benefit of priority of Chinese Patent Application No. 201811477023.6 filed on Dec. 5, 2018. The contents of the above applications are all incorporated by reference as if fully set forth herein in their entirety.

#The present disclosure relates to semiconductor technologies, and particularly to a method of fabricating an array substrate, an array substrate, a display panel, and a display device.

#Active-matrix organic light-emitting diodes (AMOLEDs) are a display technology. Among them, active matrix bodies (AMs, or referred as active-type matrix body) refer to a behind pixel addressing technology. Organic light-emitting diodes (OLEDs) are a specific type to describe a thin film display technology, which is an organic electroluminescent display. Compared with conventional liquid crystal displays used in most mobile phones, AMOLEDs are now widely used in smartphones with wider viewing angles, higher refresh rates, and thinner sizes. Therefore, they are widely adopted by smartphones and continue to be developed toward low power consumption, low cost, and large size.

#In order to more clearly describe technical solutions in embodiments of the present disclosure, drawings required to be used for the embodiments or descriptions are simply described hereinafter. Apparently, the drawings described below only illustrate some embodiments of the present disclosure. Those skilled in the art can obtain other drawings based on these drawings disclosed herein without creative effort.

#FIG. 1 is a cross-sectional diagram of a conventional array substrate.

#FIG. 2 is an embodied flowchart of a method of fabricating an array substrate according to an embodiment of the present disclosure.

#The technical solutions in the embodiments of the present application are clearly and completely described in the following with reference to the drawings in the embodiments of the present application. It is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments obtained by one skilled in the art based on the embodiments of the present application without creative efforts are within the scope of the present application.

#In the description of the present disclosure, it is to be understood that orientation or positional relationships of the terms of “center”, “longitudinal”, “transverse”, “length”, “width”, “thickness”, “upper”, “lower”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, etc. are based on orientation or positional relationships shown by the figures. It is merely for the convenience of describing the present disclosure and simplifying the description, but not indicating or implying, to which a device or a component is referred, must have a specific orientation, or must be constructed and operated in a specific orientation. Therefore, it should not be construed as limiting the disclosure. Moreover, the terms “first” and “second” are merely used for descriptive purposes and are not to be construed as indicating or implying a relative importance, or as implicitly indicating the number of the indicated technical features. Thus, features defining “first” or “second” may include one or more of the described features either explicitly or implicitly. In the description of the present disclosure, the meaning of “a plurality” is two or more unless otherwise specifically defined.

#As shown in FIG. 1, which is a cross-sectional diagram of a conventional array substrate, a thin film transistor (TFT), and a capacitor (C) spatially arranged and separated. When a TFT is fabricated by a metal oxide semiconductor, hydrogen atoms in a hydrogenation activation process need to enter a metal oxide layer (including three regions 120b, 120c, and 120d), thereby improving conductivity of the metal oxide layer to cause these regions to form conductors. On the other hand, the hydrogen atoms cannot enter a channel region, so that the region still retains semiconductor characteristics. To achieve this, different metal materials need to be used in a metal gate layer. As shown in FIG. 1, a region 140a in a gate insulating layer is made of a metal which hydrogen atoms cannot pass through, such as titanium (Ti), titanium molybdenum alloy, or alumina (Al2O3). A region 140b of the gate insulating layer is made of a metal which the hydrogen atoms cannot pass through, such as molybdenum (Mo), aluminum (Al), indium tin oxide (ITO), or indium zinc oxide (IZO). On one hand, use of different metal materials in the metal gate layer increases the material requirements. On the other hand, a process complexity is increased, and a processing difficulty and a processing cost are increased, due to the need to process a plurality of materials.