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US 10,950,435 B2Granted
SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus
AssigneeMitsubishi Electric Corporation
InventorsKenichi Hamano, Akihito Ohno, Takuma Mizobe, Yasuhiro Kimura, Yoichiro Mitani
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Abstract
A SiC substrate (1) has an off angle θ°. A SiC epitaxial layer (2) having a film thickness of Tm μm is provided on the SiC substrate (1). Triangular defects (3) are formed on a surface of the SiC epitaxial layer (2). A density of triangular defects (3) having a length of Tm/Tan θ×0.9 or more in a substrate off direction is denoted by A. A density of triangular (3) defects having a length smaller than Tm/Tan θ×0.9 in the substrate off direction is denoted by B. B/A≤0.5 is satisfied.
Claims13
A SiC epitaxial wafer comprising:
- a SiC substrate having an off angle θ°;
- and
- a SiC epitaxial layer provided on the SiC substrate and having a film thickness of Tm μm, wherein
- triangular defects are formed on a surface of the SiC epitaxial layer,
- a density of triangular defects having a length of Tm/Tanθ×0.9 or more in a substrate off direction is denoted by A,
- a density of triangular defects having a length shorter than Tm/Tanθ×0.9 in the substrate off direction is denoted by B, and
- B/A≤0.5 is satisfied.
4 more elements
Dependencies are inferred from the claim text.