Method for processing a workpiece
AssigneesMattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.
InventorsTing Xie, Hua Chung, Xinliang Lu, Shawming Ma, Michael X. Yang
Life of this patent
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Abstract
Processes for providing nitridation on a workpiece, such as a semiconductor, are provided. In one example implementation, a method can include supporting a workpiece on a workpiece support. The method can include exposing the workpiece to species generated from a capacitively coupled plasma to provide nitridation on the workpiece. The method can also include exposing the workpiece to species generated form an inductively coupled plasma to provide nitridation on the workpiece.
Claims18
A method of processing a workpiece in a plasma processing apparatus, the plasma processing apparatus comprising a processing chamber having an interior operable to receive a process gas and a workpiece support operable to support a workpiece, the method comprising:
- placing the workpiece on the workpiece support in the processing chamber;
- generating one or more species using a capacitively coupled plasma induced from a first process gas using a capacitively coupled plasma source;
- exposing the workpiece to the one or more species generated using the capacitively coupled plasma from the first process gas to provide nitridation on the workpiece,
- generating one or more species using an inductively coupled plasma induced from a second process gas using an inductively coupled plasma source;
- and
- exposing the workpiece to the one or more species generated using the inductively coupled plasma from the second process gas to increase a nitridation depth on the workpiece.
A method of processing a workpiece in a plasma processing apparatus, the plasma processing apparatus comprising a processing chamber having an interior operable to receive a process gas, a workpiece support operable to support a workpiece, at least one first plasma source disposed over the process chamber interior, and a second plasma source comprising a bias source coupled to a bias electrode in the workpiece support the method comprising:
- placing a workpiece on the workpiece support within the interior of the processing chamber of the processing apparatus;
- admitting a first process gas into the interior of the processing chamber;
- energizing the bias source to generate one or more species from a first process gas in the interior of the processing chamber;
- exposing the workpiece to the one or more species to provide a nitridation depth on the workpiece;
- admitting a second process gas into the interior of the processing chamber;
- energizing the first plasma source to generate one or more species from the second process gas in the interior of the processing chamber;
- and
- exposing the workpiece to the one or more species to increase the nitridation depth on the workpiece.
Dependencies are inferred from the claim text.