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US 10,950,426 B2Granted
Dielectric layer, interconnection structure using the same, and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Chen Ho, You-Hua Chou, Yen-Hao Liao, Che-Lun Chang, Zhen-Cheng Wu
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Abstract
A method for manufacturing a dielectric layer includes forming a first dielectric film over a substrate. A first porogen is deposited over the first dielectric film. A second dielectric film is formed on and in contact with the first dielectric film and the first porogen. The first porogen is removed.
Claims20
A method for manufacturing a dielectric layer, the method comprising:
- forming a first dielectric film over a substrate by using a first atomic layer deposition (ALD) process;
- depositing a first porogen over the first dielectric film;
- forming a second dielectric film on and in direct physical contact with the first dielectric film and the first porogen by using a second ALD process;
- and
- removing the first porogen.
2 more elements
A method for manufacturing an interconnection structure, the method comprising:
- depositing a first dielectric film over a substrate by a first atomic layer deposition process using first precursors;
- depositing a porogen over the first dielectric film;
- after depositing the porogen, performing a plasma treatment on the porogen;
- depositing a second dielectric film over the porogen and the first dielectric film by a second atomic layer deposition process using second precursors, wherein performing the plasma treatment on the porogen occurs prior to depositing the second dielectric film over the porogen;
- removing the porogen to form a dielectric layer comprising the first and second dielectric films;
- forming an opening in the dielectric layer;
- and
- forming a conductive material in the opening.
5 more elements
A method for manufacturing an interconnection structure, the method comprising:
- performing a surface treatment on a substrate to form a terminating species on a surface of the substrate;
- performing, using a first silicon-containing material, a first atomic layer deposition (ALD) process on the substrate in a first process chamber, such that a substituent of the first silicon-containing material is replaced with the terminating species;
- replacing a remaining substituent of the first silicon-containing material with a hydroxyl group;
- depositing a porogen over the first silicon-containing material in a second process chamber different than the first process chamber;
- performing, using a second silicon-containing material, a second ALD process on the porogen, such that a substituent of the second silicon-containing material is replaced with the hydroxyl group of the first silicon-containing material;
- after performing the second ALD process, decomposing the porogen;
- and
- forming a conductive line extending through the first and second silicon-containing materials.
5 more elements
Dependencies are inferred from the claim text.