Plasma processing apparatus and plasma processing method
AssigneeTokyo Electron Limited
InventorKoichi Tateshita
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorKoichi Tateshita
Estimating the term…
A plasma processing apparatus for performing a plasma processing on a substrate within a processing container includes: an upper electrode disposed above the processing container; a cylindrical shield member provided on the processing container to support a matching device; a power feeding rod disposed inward of the shield member and for supplying a high-frequency power provided from a plasma source to the upper electrode via the matching device; a gas introduction member for supplying a processing gas heated outside the shield member into the processing container from above the upper electrode; and a sealing member provided outside the shield member and on a peripheral edge of a penetration portion of the shield member through which the gas introduction member penetrates, the sealing member made of a conductive material having a lower thermal conductivity than materials of the gas introduction member and the shield member.
A plasma processing apparatus for performing a plasma processing on a substrate within a processing container, comprising:
Dependencies are inferred from the claim text.