Plasma processing apparatus and plasma processing method
AssigneeTokyo Electron Limited
InventorKoichi Tateshita
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AssigneeTokyo Electron Limited
InventorKoichi Tateshita
Estimating the term…
According to one embodiment of the present disclosure, there is provided a plasma processing apparatus for performing plasma processing on a substrate in a processing container, the plasma processing apparatus comprising: an upper electrode; a power feeding rod; a gas diffusion plate having a plurality of ejection holes and disposed below the upper electrode; a gas introduction member; an insulation introduction member; a plurality of gas supply paths; and a confluence provided directly below a connection between the upper electrode and the power feeding rod, and configured to cause the processing gas from the gas supply paths to merge, wherein the processing gas after merging in the confluence flows in a space that is formed above the gas diffusion plate and communicating with the ejection holes.
A plasma processing apparatus for performing plasma processing on a substrate in a processing container, the plasma processing apparatus comprising:
Dependencies are inferred from the claim text.