Plasma processing apparatus and method of manufacturing semiconductor device using the same

A plasma processing apparatus, comprising:

• a chamber;
• an electrostatic chuck in the chamber and loading a substrate;
• a plasma electrode generating an upper plasma on the electrostatic chuck;
• and
• a hollow cathode between the plasma electrode and the electrostatic chuck,
• wherein the hollow cathode generates a lower plasma below the upper plasma, and
• wherein the hollow cathode comprises:
• an insulation plate comprising cathode holes each having a size less than a thickness of a plasma sheath between the hollow cathode and the upper plasma;
• a bottom electrode in the insulation plate, wherein the bottom electrode comprises lower holes;
• a top electrode in the insulation plate disposed above the bottom electrode, wherein the top electrode comprises upper holes aligned with the lower holes,
• a shutter plate included in a gap between the top electrode and the bottom electrode, the shutter plate comprising shutter holes aligned with the cathode holes.