Electron beam irradiation method, electron beam irradiation apparatus, and computer readable non-transitory storage medium
AssigneeNuFlare Technology, Inc.
InventorNoriaki Nakayamada
Life of this patent
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Abstract
An electron beam irradiation method includes calculating a charge amount distribution in the case where a substrate is irradiated with an electron beam, by using an index indicating complexity of a pattern to be formed on the substrate, calculating a positional deviation amount of an irradiation pattern to be formed due to irradiation with the electron beam, by using the charge amount distribution having been calculated, correcting an irradiation position by using the positional deviation amount having been calculated, and applying an electron beam to the irradiation position having been corrected.
Claims10
An electron beam irradiation method comprising:
- calculating a charge amount distribution in a case where a substrate is irradiated with an electron beam, by using an index indicating complexity of a shape boundary of a pattern to be formed on the substrate, wherein an area density U of a pattern and a perimeter distance W of a pattern per unit area are used as the index indicating complexity of the shape boundary of the pattern;
- calculating a positional deviation amount of an irradiation pattern to be formed due to irradiation with the electron beam, by using the charge amount distribution having been calculated;
- correcting an irradiation position by using the positional deviation amount having been calculated;
- and
- applying an electron beam to the irradiation position having been corrected.
An electron beam irradiation apparatus comprising:
- a charge amount distribution calculation circuit programmed to calculate a charge amount distribution in a case where a substrate is irradiated with an electron beam, by using an index indicating complexity of a shape boundary of a pattern to be formed on the substrate, wherein an area density U of a pattern and a perimeter distance W of a pattern per unit area are used as the index indicating complexity of the shape boundary of the pattern;
- a positional deviation amount calculation circuit programmed to calculate a positional deviation amount of an irradiation pattern to be formed due to irradiation by the electron beam, by using the charge amount distribution having been calculated;
- a correction circuit programmed to correct an irradiation position by using the positional deviation amount having been calculated;
- and
- an electron beam irradiation mechanism including an emission source which emits the electron beam and a deflector which deflects the electron beam to apply an electron beam to the irradiation position having been corrected.
A non-transitory computer readable storage medium storing a program for causing a computer, which controls an electron beam irradiation apparatus for applying an electron beam, to execute processing comprising:
- calculating a charge amount distribution in a case where a substrate is irradiated with an electron beam, by using an index, which indicates complexity of a shape boundary of a pattern to be formed on the substrate, read from a storage device, wherein an area density U of a pattern and a perimeter distance W of a pattern per unit area are used as the index indicating complexity of the shape boundary of the pattern;
- and
- calculating a positional deviation amount of an irradiation pattern to be formed due to irradiation by the electron beam, by using the charge amount distribution having been calculated.
Dependencies are inferred from the claim text.