Apparatuses, systems, and methods for ion traps
AssigneeHoneywell International Inc.
InventorDaniel Youngner
Life of this patent
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Abstract
Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.
Claims20
An ion trap apparatus, comprising:
- a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces;
- a plurality of sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails;
- a number of through-silicon vias (TSVs) formed through a substrate of the ion trap;
- and
- a trench capacitor associated with at least one TSV.
An ion trap system, comprising:
- a substrate material;
- a plurality of sequential conductive materials formed above the substrate material, wherein:
- a first conductive material forms at least a portion of a ground plane;
- a second conductive material forms at least a portion of a signal routing plane;
- and
- a third conductive material forms at least a portion of a ground connection plane;
- a number of longitudinal gaps formed in the second conductive material, wherein the number of longitudinal gaps separate a plurality of longitudinal sequences of direct current (DC) electrodes from at a plurality of separate longitudinal radio frequency (RF) rails positioned between the plurality of sequences of DC electrodes;
- a first number of through-silicon vias (TSVs) formed through the substrate material;
- and
- a first number of trench capacitors associated with at least one of the first number of TSVs.
A method of forming an ion trap system, comprising:
- forming a plurality of sequential conductive materials above a substrate material, including:
- a first conductive material forming at least a portion of a ground plane;
- a second conductive material forming at least a portion of a signal routing plane;
- and
- a third conductive material forming at least a portion of a ground connection plane;
- forming a number of gaps in the second planar conductive material to separate longitudinal sequences of direct current (DC) electrodes from at least two separate longitudinal radio frequency (RF) rails positioned between the sequences of DC electrodes;
- forming a first number of through-silicon vias (TSVs) through the substrate material;
- and
- forming a first number of trench capacitors associated with at least one of the first number of TSVs to provide an electrical potential to each DC electrode of the longitudinal sequences of DC electrodes.
Dependencies are inferred from the claim text.