Method used in forming an electronic device comprising conductive material and ferroelectric material

A method used in forming an electronic device comprising conductive material and ferroelectric material, the method comprising:

• forming a composite stack comprising multiple metal oxide-comprising insulator materials and multiple non-ferroelectric insulating materials, at least one of the multiple metal oxide-comprising insulator materials comprising a first layer that is between and directly against immediately-adjacent of the multiple non-ferroelectric insulating materials that are on opposing sides of the first layer, the multiple metal oxide-comprising insulator materials being of different composition from that of the immediately-adjacent non-ferroelectric insulating materials, at least one of the multiple metal oxide-comprising insulator materials comprising one or more members of the group consisting of zirconium, lead zirconium titanate, tantalum oxide, strontium oxide, strontium titanate oxide, titanium oxide and barium strontium titanate;
• subjecting the composite stack to a temperature of at least 200° C., the composite stack after the subjecting comprising multiple ferroelectric metal oxide-comprising insulator materials at least one of which comprises the first layer, the composite stack after the subjecting being ferroelectric and comprising the multiple non-ferroelectric insulating materials, the multiple ferroelectric metal oxide-comprising insulator materials comprising second and third layers that are respectively directly against one of the multiple non-ferroelectric insulating materials that are on the opposing sides of the first layer after the subjecting;
• and
• forming conductive material that is adjacent the composite stack.