Preread and read threshold voltage optimization

A system comprising:

• a memory device;
• and
• a processing device, operatively coupled to the memory device, to:
• perform a read operation to read first data at the memory device using a read threshold voltage of a plurality of read threshold voltages, wherein the plurality of read threshold voltage are used to perform read operations at the memory device;
• receive a request to perform a write operation to write second data at the memory device;
• and
• responsive to receiving the request to write the second data at the memory device, perform a preread operation to read third data at the memory device using a first preread threshold voltage that is different than any of the plurality of read threshold voltages,
• perform a write operation that writes a subset of the second data at the memory device based on the preread operation.

A method comprising:

• receiving a request to read data at a memory device;
• performing a first read operation to read the data at the memory device using a first read threshold voltage;
• determining that the data read at the memory device using the first read threshold voltage is associated with a first unsuccessful correction of an error;
• and
• responsive to determining that the data read at the memory device using the first read threshold voltage is associated with the first unsuccessful correction of the error,
• storing a second read threshold voltage at a register to replace a preread threshold voltage previously stored at the register that is associated with the memory device, wherein the preread threshold voltage was previously used to perform a preread operation at the memory device, and
• performing a second read operation to read the data at the memory device using the second read threshold voltage.