Two transistor, one resistor non-volatile gain cell memory and storage element

A resistive random access memory element comprising:

• a first metal layer to provide a first electrical terminal;
• a second metal layer to provide a second electrical terminal, the second electrical terminal having a surface;
• a conductive filament layer between the first electrical terminal and the second electrical terminal;
• an oxygen exchange layer between the conductive filament layer and the second electrical terminal, the oxygen exchange layer having a surface facing the surface of the second electrical terminal;
• a first dielectric layer between the conductive filament layer and the first electrical terminal;
• and
• a second dielectric layer between the oxygen exchange layer and the second electrical terminal, the second dielectric layer in direct contact with the surface of the oxygen exchange layer and in direct contact with the surface of the second electrical terminal, wherein the second dielectric layer separates the surface of the oxygen exchange layer from the surface of the second electrical terminal.

A method of forming a resistive memory gain cell comprising:

• patterning logic circuitry over a silicon substrate;
• applying a first interlayer dielectric (ILD) over the logic circuitry;
• patterning a first metal layer to form a source line terminal of a resistive memory element and a bit line read line and a ground terminal of a read transistor of the gain cell;
• applying a second ILD over the first metal layer;
• forming a resistive memory element over the source line in the ILD, a gate channel of the read transistor in the ILD, a metal terminal connecting the resistive memory element and the gate channel, wherein forming a resistive memory element comprises:
• etching an opening in the first ILD over the source line terminal;
• depositing an indium gallium zinc oxide layer in the opening over the source line terminal;
• and
• depositing a hafnium dioxide layer over the indium gallium zinc oxide layer, and wherein the metal terminal is deposited in part over the hafnium dioxide layer;
• patterning a second metal layer as a common node coupled to the metal terminal of the resistive memory element and a bit line terminal of a write transistor;
• applying a third ILD over the second metal layer;
• forming a gate channel of the write transistor in the third ILD coupled to the common node;
• and
• patterning a third metal layer as a write line of the write transistor coupled to the gate channel in the third ILD.

A method of forming a resistive memory gain cell comprising:

• patterning logic circuitry over a silicon substrate;
• applying a first interlayer dielectric (ILD) over the logic circuitry;
• patterning a first metal layer to form a source line terminal of a resistive memory element and a bit line read line and a ground terminal of a read transistor of the gain cell;
• applying a second ILD over the first metal layer;
• forming a resistive memory element over the source line in the ILD, a gate channel of the read transistor in the ILD, a metal terminal connecting the resistive memory element and the gate channel;
• patterning a second metal layer as a common node coupled to the metal terminal of the resistive memory element and a bit line terminal of a write transistor;
• applying a third ILD over the second metal layer;
• forming a gate channel of the write transistor in the third ILD coupled to the common node;
• and
• patterning a third metal layer as a write line of the write transistor coupled to the gate channel in the third ILD, the method further comprising depositing a first nitride layer in the opening before depositing the hafnium dioxide and depositing a second nitride layer after depositing the indium gallium zinc oxide layer.

A resistive random access memory element comprising:

• a first metal layer to provide a first electrical terminal;
• a second metal layer to provide a second electrical terminal, the second electrical terminal having a surface;
• a conductive filament layer between the first electrical terminal and the second electrical terminal;
• an oxygen exchange layer between the conductive filament layer and the second electrical terminal, the oxygen exchange layer having a surface facing the surface of the second electrical terminal;
• a first dielectric layer between the conductive filament layer and the first electrical terminal, wherein the first dielectric layer is a first nitride layer;
• and
• a second dielectric layer between the oxygen exchange layer and the second electrical terminal, the second dielectric layer in direct contact with the surface of the oxygen exchange layer and in direct contact with the surface of the second electrical terminal, wherein the second dielectric layer is a second nitride layer.

A computing system comprising:

• a memory having instructions stored thereon;
• and
• a processor coupled to the memory to execute the instructions, the processor having silicon logic circuitry formed on a silicon substrate and a memory array having a plurality of gain cells, the memory array being formed in back end metal layers formed over the logic circuitry, the gain cells each having a resistive memory element coupled to a common node at one end to store a value and directly to a source line at another end, the value being read as conductivity between the common node and the source line of the resistive memory element, a write transistor having a source coupled directly to a bit line, a gate coupled to a write line, and a drain coupled to the common node to write a value at the bit line to the resistive memory element upon setting the write line high, and a read transistor having a source coupled to a bit line read line and a gate coupled directly to the common node to read the value written to the resistive memory element as a value at the read transistor gate, wherein the resistive memory element is formed of a first metal layer to provide a first electrical terminal, a second metal layer to provide a second electrical terminal, a hafnium dioxide layer between the first electrical terminal and the second electrical terminal, and an indium gallium zinc oxide layer between the hafnium dioxide layer and the second electrical terminal.