Microdisplay with reduced pixel size and method of forming same
AssigneeeMagin Corporation
InventorIhor Wacyk
Life of this patent
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Abstract
A vertically stacked pixel circuit is provided that includes a high voltage device for driving a pixel on an upper silicon layer, and low voltage circuitry (such as matrix addressing circuitry, data storage circuitry and uniformity compensation circuitry) on a lower silicon layer. The circuitry on the upper and lower silicon layers are electrically connected via a through-silicon via. This unique arrangement allows the high voltage device for driving a pixel to be physically located on top of the larger number of low voltage devices in the lower silicon layer in order to achieve a substantial reduction in overall pixel emission area. The vertically stacked pixel circuit is particularly suited for organic light-emitting diode microdisplays.
Claims13
A vertically stacked pixel circuit, comprising:
- a lower portion comprising (1) low voltage circuitry that includes at least one low voltage transistor and (2) data storage circuitry that includes at least one trench capacitor;
- and
- an upper portion, disposed above the lower portion, comprising at least one high voltage transistor and pixel drive circuitry configured to drive a first organic light-emitting diode (OLED), wherein the upper portion includes a first through-silicon via (TSV) and at least one high voltage transistor;
- wherein the upper and lower portions are electrically connected via a single electrical connection point that includes the first TSV.
A vertically stacked pixel circuit, comprising:
- a lower portion comprising (1) low voltage circuitry that includes at least one low voltage transistor having an operating voltage of 3 volts or lower and (2) data storage circuitry that includes at least one trench capacitor;
- and
- an upper portion, disposed above the lower portion, comprising a first organic light-emitting diode (OLED) and pixel drive circuitry configured to drive the first OLED, wherein the upper portion includes a first through-silicon via (TSV) and high voltage circuitry that includes at least one high voltage transistor having an operating voltage greater than 3 volts;
- wherein the upper and lower portions are electrically connected via a single electrical connection point that includes the first TSV.
Dependencies are inferred from the claim text.