Reducing chemoepitaxy directed self-assembled defects
AssigneeInternational Business Machines Corporation
InventorsMichael A. Guillorn, Kafai Lai, Chi-Chun Liu, Ananthan Raghunathan, Hsinyu Tsai
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Abstract
A method for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, the method comprising expanding a shape of the guiding pattern by a predetermined distance in both lateral directions to form a fin keep mask, where the fin keep mask comprises a stand-alone mask.
Claims7
A method for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, the method comprising:
- forming a fin keep mask by manipulating a shape of the guiding pattern;
- wherein the fin keep mask comprises a stand-alone mask.
A non-transitory computer-readable recording medium recording a program for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, the program causing a computer to perform:
- forming a fin keep mask by manipulating a shape of the guiding pattern;
- wherein the fin keep mask comprises a stand-alone mask.
A computer system for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, said computer system comprising:
- a processor;
- and
- a memory, the memory storing instructions to cause the processor to perform:
- forming a fin keep mask by manipulating a shape of the guiding pattern;
- wherein the fin keep mask comprises a stand-alone mask.
Dependencies are inferred from the claim text.