Photoresist stripper
AssigneeVersum Materials US, LLC
InventorsYuanmei Cao, Michael Phenis, Richard Peters
Life of this patent
Estimating the term…
Abstract
Improved stripper solutions for removing photoresists from substrates are provided that typically have flash points above about 95° C. and high loading capacities. The stripper solutions comprise diethylene glycol butyl ether, quaternary ammonium hydroxide, and an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, the amino and hydroxyl substituents attached to two different carbon atoms. Some formulations can additionally contain a secondary solvent. The formulations do not contain DMSO. Methods for use of the stripping solutions are additionally provided.
Claims21
A stripper solution for removing photoresist from substrates comprising:
- about 30 weight percent to about 97 weight percent diethylene glycol butyl ether;
- about 1 weight percent to about 7 weight percent of quaternary ammonium hydroxide;
- about 1 weight percent to about 75 weight percent of (2-(2-aminoethoxy)ethanol) or (2-(2-aminoethoxy)ethanol) and secondary solvent;
- about 0.001 weight percent to about 7 weight percent of at least one corrosion inhibitor;
- and
- about 0.1 weight percent to about 20 weight percent water;
- wherein said at least one corrosion inhibitor is selected from the group consisting of resorcinol, glycerol, sorbitol, and copper (II) nitrate hemi(pentahydrate), and
- wherein the solution is essentially free of DMSO.
A stripper solution for removing photoresist from substrates comprising:
- about 50 weight percent to about 97 weight percent diethylene glycol butyl ether;
- about 1 weight percent to about 5 weight percent of quaternary ammonium hydroxide;
- about 3 weight percent to about 40 weight percent of (2-(2-aminoethoxy)ethanol);
- about 0.001 weight percent to about 1 weight percent of corrosion inhibitor;
- and
- about 1 weight percent to about 10 weight percent of water;
- wherein a ratio of the amount of diethylene glycol butyl ether to the amount of water is greater than about 5;
- wherein the solution exhibits a flash point above about 95 degrees Celsius;
- and
- wherein the solution is essentially free of DMSO.
The method of removing at least one photoresist layer comprising the steps of:
- contacting a substrate comprising at least one photoresist layer with a stripper solution at a temperature and for a time to at least partially remove said at least one photoresist layer;
- and
- rinsing said substrate after said contacting step;
- wherein said stripper solution comprises about 30 weight percent to about 97 weight percent diethylene glycol butyl ether;
- about 1 weight percent to about 7 weight percent of quaternary ammonium hydroxide;
- about 1 weight percent to about 75 weight percent of (2-(2-aminoethoxy)ethanol) or (2-(2-aminoethoxy)ethanol) and secondary solvent;
- about 0.001 weight percent to about 7 weight percent of corrosion inhibitor;
- and
- about 0.1 weight percent to about 20 weight percent water;
- and
- wherein the solution is essentially free of DMSO.
Dependencies are inferred from the claim text.