Single crystalline Cs2U4O12 and processes of making and using same
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorsThomas A. Bowen, Eric J. Plummer, James M. Mann
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Abstract
The present invention relates to single crystalline Cs2U4O12, hydrothermal growth processes of making such single crystals and methods of using such single crystals. In particular, Applicants disclose single crystalline Cs2U4O12 having a P21/c structure and a process of making and using same. Unlike other single crystalline Cs2U4O12 structures the P21/c structure has a different set of atomic coordinates which gives a different framework which in turn provides the altered performance of such single crystals.
Claims9
A single crystalline Cs2U4O12 having a P21/c symmetry structure.
A process making a single crystalline Cs2U4O12 having a P21/c symmetry structure, said process comprising autoclaving for a period of from about 24 hours to about one year, at a pressure of from about 200 psi to about 100,000 psi, a container comprising an ampoule having a bottom feedstock zone and a top crystal growth zone, said bottom feedstock zone having a temperature range of from about 200° C. to 1000° C., and top crystal growth zone having a temperature range of from about 50° C. to 950° C., said process having a temperature gradient between said bottom feedstock zone and said top crystal growth zone of from about 1° C. to 130° C.;
- said container comprising:
- 0.001-4.999:5 internal fill to ampoule volume, 0.01-8:4 feed stock to mineralizer, from 0.01:4 to 4:0.01 of each powdered feed stock.
Dependencies are inferred from the claim text.