Group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor substrate
AssigneeFurukawa Co., Ltd.
InventorsHiroki Goto, Yujiro Ishihara
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Abstract
There is provided a group III nitride semiconductor substrate (free-standing substrate (30)) that is formed of a group III nitride semiconductor crystal and has a thickness of 300 μm or more and 1000 μm or less. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A difference in a half width of an X-ray rocking curve (XRC) measured by making X-rays incident on each of the first and second main surfaces in parallel to an m axis of the group III nitride semiconductor crystal is 500 arcsec or less.
Claims9
A group III nitride semiconductor substrate that is formed of a group III nitride semiconductor crystal and has a thickness of 300 μm or more and 1000 μm or less, wherein both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes, and a difference between a half width of an X-ray rocking curve (XRC) measured by making X-rays incident on the first main surface in parallel to an m axis of the group III nitride semiconductor crystal and a half width of an X-ray rocking curve (XRC) measured by making X-rays incident on the second main surface in parallel to the m axis of the group III nitride semiconductor crystal is 500 arcsec or less.
Dependencies are inferred from the claim text.