Nanopore forming method and uses thereof
AssigneesEcole Polytechnique Federale De Lausanne (Epfl), Roche Sequencing Solutions, Inc.
InventorsJiandong Feng, Ke Liu, Aleksandra Radenovic, Yann Astier
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Abstract
The invention relates to a method for making nanopores in thin layers or monolayers of transition metal dichalcogenides that enables accurate and controllable formation of pore within those thin layer(s) with sub-nanometer precision.
Claims16
A method of forming a nanopore in a layer of transition metal dichalcogenide crystals residing between a first electrode on a first side of the layer of transition metal dichalcogenide crystals and a second electrode on a second side of the layer of transition metal dichalcogenide crystals, wherein a first liquid is disposed on the first side and a second liquid is disposed on the second side, the method comprising:
- applying a voltage at a first voltage level across the first electrode and the second electrode and across the layer of transition metal dichalcogenide crystals such that an aperture is created in the layer of transition metal dichalcogenide crystals, wherein the applying the voltage comprises applying a direct current voltage;
- and
- maintaining the voltage at the first voltage level for a specified amount of time, the specified amount of time corresponding to the aperture widening to have at least a specified diameter;
- after the specified amount of time, reducing the applied voltage to a second voltage level to inhibit the widening of the aperture.
Dependencies are inferred from the claim text.