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US 10,947,412 B2Granted
Crack-resistant silicon-based planarizing compositions, methods and films
AssigneeHoneywell International Inc.
InventorsHong Min Huang, Helen Xiao Xu
Life of this patent
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Abstract
A composition for planarizing a semiconductor device surface includes a silicon-based material and a cross-linker including a siloxane compound according to the general formula: wherein R is an aliphatic comprising group and R1, R2, R3, R4, R5, and R6 are each independently selected from the group consisting of: H or an alkyl group with substituted or unsubstituted carbons.
Claims16
A composition for planarizing a surface of a semiconductor device, the composition comprising:
- a silicon-based material including a polysiloxane resin, the polysiloxane resin formed from monomers consisting of methyltriethoxysilane, dimethyldiethoxysilane, and phenyl triethoxysilane;
- at least one solvent;
- a catalyst;
- and
- a cross-linker including a siloxane compound according to the general formula:
- wherein R is an aliphatic comprising group and R1, R2, R3, R4, R5, and R6 are each independently selected from the group consisting of:
- H or an alkyl group with substituted or unsubstituted carbons.
4 more elements
A method for making a planarizing composition, the method comprising:
- dissolving a silicon-based material in one or more solvents to form a silicon-based material solution, the silicon-based material including a polysiloxane resin, the polysiloxane resin formed from monomers consisting of methyltriethoxysilane, dimethyldiethoxysilane, and phenyl triethoxysilane;
- adding a catalyst to the silicon-based material solution;
- and
- adding a cross-linker to the silicon-based material solution, the cross-linker includes a siloxane compound according to the general formula:
- wherein R is an aliphatic comprising group and R1, R2, R3, R4, R5, and R6 are each independently selected from the group consisting of:
- H or an alkyl group with substituted or unsubstituted carbons.
3 more elements
A planarizing film for a semiconductor device, the film comprising:
- a cured silicon-based polymer including a polysiloxane resin, the polysiloxane resin formed from monomers consisting of methyltriethoxysilane, dimethyldiethoxysilane, and phenyl triethoxysilane;
- a residue of a catalyst;
- and
- a residue of a cross-linker, the residue of the cross-linker including a residue of a siloxane compound according to the general formula:
- wherein R is an aliphatic comprising group and R1, R2, R3, R4, R5, and R6 are each independently selected from the group consisting of:
- H or an alkyl group with substituted or unsubstituted carbons.
3 more elements
Dependencies are inferred from the claim text.