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US 10,947,152 B2Granted
Electrostatic doping of a layer of a conductive or non-conductive material
AssigneesCentre National De La Recherche Scientific, Universite Pierre Et Marie Curie (Paris 6)
InventorsAbhay Shukla, Johan Biscaras, Andrea Paradisi
Life of this patent
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Abstract
The invention relates to a process for permanently electrostatically doping a layer of a conductive or non-conductive material that is deposited on a solid substrate, to the doped material obtained according to this process, and to the use of such a material.
Claims7
Process for controllably and reversibly electrostatically doping a conductive or non-conductive material that is deposited in the form of a layer on a solid substrate, wherein:
- said conductive or non-conductive material is chosen from graphene, molybdenum disulfide and zinc oxide, and
- said process is carried out under vacuum, that said substrate is a glassy matrix, said process comprises at least the following steps:
- heating said glassy matrix including said layer of conductive or non-conductive material to a doping temperature (TD) ranging from 50° C. to 130° C.;
- applying an electric field between said glassy matrix and said conductive or non-conductive material having a voltage ranging from −300 V to +300 V, while maintaining the temperature at the doping temperature;
- cooling said glassy matrix including said layer of conductive or non-conductive material to an operating temperature (TU), said operating temperature being lower than 50° C.;
- said process being carried out on at least a portion of the surface of said conductive or non-conductive material.
3 more elements
Dependencies are inferred from the claim text.