Dielectric, capacitor and semiconductor device including the same, and method of preparing the dielectric

A capacitor comprising:

• a first electrode;
• a second electrode;
• and
• a dielectric between the first electrode and the second electrode,
• wherein the dielectric comprises an oxide comprising a composition represented by Formula 1 and comprises a perovskite type crystal structure belonging to a polar space group or a non-polar space group other than a Pbnm space group,
• wherein the oxide is an aggregate of primary particles, and
• AxByO3-δ <Formula 1>
• wherein, in Formula 1,
• A is a monovalent, divalent, or trivalent cation,
• B is a trivalent, tetravalent, or pentavalent cation, and
• 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.

A semiconductor device comprising:

• a dielectric,
• wherein the dielectric comprises an oxide comprising a composition represented by Formula 1 and comprises a perovskite type crystal structure belonging to a polar space group or a non-polar space group other than a Pbnm space group,
• wherein the oxide is an aggregate of primary particles, and
• AxByO3-δ <Formula 1>
• wherein, in Formula 1,
• A is a monovalent, divalent, or trivalent cation,
• B is a trivalent, tetravalent, or pentavalent cation, and
• 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.

A method of preparing a dielectric, the method comprising:

• mixing an alkali metal or an alkaline earth metal with a transition metal precursor to prepare a mixture;
• performing a first thermal process on the mixture in an air atmosphere at a temperature in a range of 1,000° C. to 1,400° C. for 1 hour to 20 hours to prepare a first sintered material;
• molding and pressurizing the first sintered material to prepare a molded article;
• and
• performing a second thermal process on the molded article at a temperature of 1,400° C. or higher for 1 hour to 20 hours to prepare a second sintered material,
• wherein the dielectric comprises an oxide comprising a composition represented by Formula 1 and comprises a perovskite type crystal structure belonging to a polar space group or a non-polar space group other than a Pbnm space group,
• wherein the oxide is an aggregate of primary particles, and
• AxByO3-δ <Formula 1>
• wherein, in Formula 1,
• A is a monovalent, divalent, or trivalent cation,
• B is a trivalent, tetravalent, or pentavalent cation, and
• 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.