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US 10,947,112 B2Granted
Method of manufacturing semiconductor quantum dot and semiconductor quantum dot
AssigneeFUJIFILM Corporation
InventorsKenji Wada, Yuji Yoshida
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AssigneeFUJIFILM Corporation
InventorsKenji Wada, Yuji Yoshida
Estimating the term…
There is provided a method of manufacturing a semiconductor quantum dot including the following steps (A1) and (B1): a step (A1) of causing a nanoparticle including a specific compound semiconductor and a salt of a specific metal a1 to react with each other to introduce the metal a1 into a surface layer of the nanoparticle; and a step (B1) of causing the nanoparticle in which the metal a1 is introduced into the surface layer and a salt of a specific metal b1 to react with each other to introduce the metal b1 into the surface layer of the nanoparticle. There is provided a semiconductor quantum dot having a structure in which a specific metal a1 and/or a specific metal b1 is introduced into a surface layer of a nanoparticle including a specific compound semiconductor.
A method of manufacturing a semiconductor quantum dot comprising the following steps (A1) and (B1):
A semiconductor quantum dot having a structure in which at least one of reaction products selected from a reaction product of at least one metal a1 selected from a metal group [a] below with at least one of anion precursors selected from a sulfur-containing compound, a sulfur atom, a nitrogen-containing compound, and a phosphorus-containing compound, and a reaction product of at least one metal b1 selected from a metal group [b] below with at least one of anion precursors selected from a sulfur-containing compound, a sulfur atom, a nitrogen-containing compound, and a phosphorus-containing compound is introduced into a surface layer of a nanoparticle including at least one compound semiconductor selected from PbS, PbSe, InN, InAs, InSb, and InP,
Dependencies are inferred from the claim text.
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Containing inorganic luminescent materials: containing phosphorus
Nanooptics
Nanotechnology for materials or surface science
Manufacture or treatment of nanostructures
About 11 years 3 months of term left · ends 3 Feb 2038 (estimated)
The present invention relates to a method of manufacturing a semiconductor quantum dot and a semiconductor quantum dot.
A semiconductor quantum dot (hereinafter, simply referred to as a “quantum dot”) is a nanoscale semiconductor crystal (several nanometers to several tens of nanometers) and exhibits featured light absorption and light emission characteristics based on a quantum size effect. The application range expected for the quantum dot is wide, and for example, application research on a display, lighting, living body imaging, solar cells, and the like has been conducted based on strong light emission characteristics corresponding to a particle diameter thereof. Application research as quantum dot lasers, single electron transistors, and the like which realize high luminance and low power consumption by utilizing the unique electronic characteristics of the quantum dot has been conducted.
Currently, a mainstream of the quantum dot is a cadmium-based quantum dot using nanocrystals (nanocrystals such as CdSe and CdS) having cadmium as a cation. However, there is concern about the toxicity of cadmium, and thus the need for a non-cadmium-based quantum dot is increasing. A quantum dot using a nanocrystal (nanocrystals such as PbS, PbSe, InN, InAs, InSb, InP, and the like) having lead, indium, or the like as a cation has been known as a non-cadmium-based quantum dot. However, the non-cadmium-based quantum dots still have many problems in terms of performance, and a quantum dot that is on the market and is practically used is limited to a cadmium-based quantum dot at present.
The preferable embodiment of the present invention is provided below, but the present invention is not limited to these embodiments.
[Method of Manufacturing Quantum Dot]
A method (hereinafter, simply referred to as a “manufacturing method of the present invention”) of manufacturing a quantum dot of the present invention includes steps (A1) and (A2).