Integrated multilayer structure for use in sensing applications and method for manufacturing thereof

An integrated multilayer structure for use in sensing applications, the multilayer structure comprising:

• a plastic layer having a first side and a second side opposite the first side;
• a top film layer on the first side of the plastic layer provided with reactance sensing electronics for sensing of one or more selected target quantities or qualities and conversion thereof into representative electrical signals, the sensing electronics comprising a sensing element and an electrical connection configured to connect the sensing element to an associated control circuitry, in which at least a majority of the top film layer is planar;
• a bottom film layer on the second side of the plastic layer having a plurality of areas including at least one non-sensing area and at least one sensing area substantially superimposed with the sensing element of the sensing electronics, the bottom film layer having a non-planar configuration and including at least one physical feature separate from the sensing element positioned at a position of the at least one sensing area to improve a sensing sensitivity of the sensing element, the at least one physical feature locally, permanently reducing an electrical distance between the bottom film layer and the sensing element such that the top and bottom film layers are closer to one another at the at least one sensing area than at the least one non-sensing area, the at least one physical feature having an inner surface and an outer surface defining a thickness of the bottom film layer therebetween, the inner surface and the outer surface being non-planar;
• and a recess positioned entirely below both a non-planar portion of the bottom film layer and the planar majority of the top film layer and being a bottom-most structure of the integrated multilayer structure.