# US 10,945,643 B2 · Microelectronic sensor for biometric authentication

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- Number: US 10,945,643 B2
- Document ID: US10945643B2
- Status: Granted
- Kind: B2
- Application number: 15/478,061
- Filed: 2017-04-03
- Published: 2017-09-14
- Granted: 2021-03-16
- Earliest claimed: 2016-03-10
- Assignees: Epitronic Holdings Pte Ltd.
- Applicants: Epitronic Holdings Pte. Ltd.
- Inventors: Ayal Ram
- Web page: https://patentgrep.com/patent/US10945643B2

## CPC

- A61B 5/1172: using fingerprinting
- A61B 5/0022: {Monitoring a patient using a global network, e.g. telephone networks, internet}
- A61B 5/02: Detecting, measuring or recording for evaluating the cardiovascular system, e.g. pulse, heart rate, blood pressure or blood flow
- A61B 5/0507: using microwaves or terahertz waves
- A61B 5/117: Identification of persons (methods or arrangements for recognising patterns, e.g. fingerprints, G06F18/00, G06V40/00; identification of persons by analysing their voice or speech G10L17/00)
- A61B 5/18: for vehicle drivers {or machine operators}
- A61B 5/681: {Wristwatch-type devices}
- A61B 5/6893: {Cars}
- A61B 5/6897: {Computer input devices, e.g. mice or keyboards}
- A61B 5/6898: {Portable consumer electronic devices, e.g. music players, telephones, tablet computers}
- H10D 30/4732: {using Group III-V semiconductor material}
- H10D 64/685: {being perpendicular to the channel plane}
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10W 70/611: {for connecting multiple chips together}
- H10W 70/688: {Flexible insulating substrates}
- A61B 2562/028: Microscale sensors, e.g. electromechanical sensors [MEMS]
- A61B 2562/166: the sensor is mounted on a specially adapted printed circuit board
- H04W 4/80: Services using short range communication, e.g. near-field communication [NFC], radio-frequency identification [RFID] or low energy communication
- H10D 30/472: {having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT}
- H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs}
- H10D 62/117: {Shapes of semiconductor bodies}
- H10D 62/149: {Source or drain regions of field-effect devices}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10D 64/68: characterised by the insulator, e.g. by the gate insulator
- A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H04W: WIRELESS COMMUNICATION NETWORKS (broadcast communication H04H; communication systems using wireless links for non-selective communication, e.g. wireless extensions H04M1/72)

## Abstract

In some embodiments, a microelectronic sensor includes an open-gate pseudo-conductive high-electron mobility transistor and used for biometric authentication of a user. The transistor comprises a substrate, on which a multilayer hetero-junction structure is deposited. This hetero-junction structure comprises a buffer layer and a barrier layer, both grown from III-V single-crystalline or polycrystalline semiconductor materials. A two-dimensional electron gas (2DEG) conducting channel is formed at the interface between the buffer and barrier layers and provides electron current in the system between source and drain electrodes. The source and drain contacts, which maybe either ohmic or non-ohmic (capacitively-coupled), are connected to the formed 2DEG channel and to electrical metallizations, the latter are placed on top of the transistor and connect it to the sensor system. The metal gate electrode is placed between the source and drain areas on or above the barrier layer, which may be recessed or grown to a specific thickness. An optional dielectric layer is deposited on top of the barrier layer.

## Claims

### Claim 1

A biometric authentication device for biometric authentication of a user comprising a microelectronic sensor comprising
(1) an open-gate pseudo-conductive high-electron mobility transistor or an array thereof capable of sensing electrical signals produced by a body of the user, wherein said transistor comprises:
a) a multilayer hetero-junction structure made of gallium nitride (GaN) and aluminium gallium nitride (AlGaN) single-crystalline or polycrystalline semiconductor materials, and placed on a substrate layer, said structure comprising at least one buffer layer and at least one barrier layer, said layers being stacked alternately;
b) a conducting channel comprising a two-dimensional electron gas (2DEG) or a two-dimensional hole gas (2DHG), formed at the interface between said buffer layer and said barrier layer, and upon applying a bias to said transistor, becoming capable of providing electron or hole current, respectively, in said transistor between source and drain contacts;
c) the source and drain contacts connected to said 2DEG or 2DHG conducting channel and to electrical metallisations for connecting said transistor to an electric circuit; and
d) an internal or external metal gate electrode electrically connected to a wire contact with any single body point and either placed on a top layer of said heterojunction structure between said source and drain contacts or mechanically suspended over said top layer with no physical contact to said top layer beneath;
(2) an Alternate Current (AC) electrode connected to said transistors and capable of generating radio-frequency (RF) millisecond square-sinus AC pulses being coupled into the body of the user; and
(3) a microcontroller for switching between the two operational modes of the microelectronic sensor: the AC pulse-generating/emitting mode with said AC electrode and the sensing mode with said transistor or transistors;
said transistor is characterised in that a thickness of the top layer of said heterojunction structure in the open gate area is 5-9 nanometres (nm) and the surface of said top layer has a roughness of 0.2 nm or less, wherein the combination of said thickness and said roughness of the top layer creates a quantum electronic effect of operating said 2DEG or 2DHG channel simultaneously in both normally-on and normally-off operation modes of the channel, thereby making said transistor to conduct electric current through said channel in a quantum well between normally-on and normally-off operation modes of the transistor.

### Claim 2 (depends on 1)

The biometric authentication device of claim 1, wherein said biometric authentication device is suitable for being integrated within a smartwatch, smartphone or in any other available personal gadget or wearable device, with or without any direct skin-contact to the microelectronic sensor.

### Claim 3 (depends on 2)

The biometric authentication device of claim 2, wherein said wearable device is a bracelet, a necklace, a headband, a ring or an earring.

### Claim 4 (depends on 1)

The biometric authentication device of claim 1, wherein said biometric authentication device is suitable for being integrated within a smartphone lock or car lock, within a biometric authentication module of any security system, personal computer or laptop, automated teller machine, automatic gate opener, swing gate opener, flap barrier or turnstile gate, or within a biometric authentication chip of a credit card or any identification card or tag.

### Claim 5 (depends on 1)

The biometric authentication device of claim 1, wherein said biometric authentication device is suitable for use in bio-vital hemodynamic monitoring of a driver for the purpose of determining the sleepiness, tiredness, nervousness, cardio risk, stress and other conditions dangerous for driving a car.

### Claim 6

A method for biometric authentication of a user comprising:
providing a microelectronic sensor comprising:
(1) an open-gate pseudo-conductive high-electron mobility transistor or an array thereof capable of sensing electrical signals produced by a body of the user, wherein said transistor comprises:
a) a multilayer hetero-junction structure made of gallium nitride (GaN) and aluminium gallium nitride (AlGaN) single-crystalline or polycrystalline semiconductor materials, and placed on a substrate layer, said structure comprising at least one buffer layer and at least one barrier layer, said layers being stacked alternately;
b) a conducting channel comprising a two-dimensional electron gas (2DEG) or a two-dimensional hole gas (2DHG), formed at the interface between said buffer layer and said barrier layer, and upon applying a bias to said transistor, becoming capable of providing electron or hole current, respectively, in said transistor between source and drain contacts;
c) the source and drain contacts connected to said 2DEG or 2DHG conducting channel and to electrical metallisations for connecting said transistor to an electric circuit; and
d) an internal or external metal gate electrode electrically connected to a wire contact with any single body point and either placed on a top layer of said heterojunction structure between said source and drain contacts or mechanically suspended over said top layer with no physical contact to said top layer beneath;
(2) an Alternate Current (AC) electrode connected to said transistors and capable of generating radio-frequency (RF) millisecond square-sinus AC pulses being coupled into the body of the user; and
(3) a microcontroller for switching between the two operational modes of the microelectronic sensor: the AC pulse-generating/emitting mode with said AC electrode and the sensing mode with said transistor or transistors;
said transistor is characterised in that a thickness of the top layer of said heterojunction structure in the open gate area is 5-9 nanometres (nm) and the surface of said top layer has a roughness of 0.2 nm or less, wherein the combination of said thickness and said roughness of the top layer creates a quantum electronic effect of operating said 2DEG or 2DHG channel simultaneously in both normally-on and normally-off operation modes of the channel, thereby making said transistor to conduct electric current through said channel in a quantum well between normally-on and normally-off operation modes of the transistor;
contacting a single sensing point on the body of the user with said microelectronic sensor, or activating said microelectronic sensor on calling or when contact is established;
switching said microelectronic sensor to the AC pulse-generating mode for emitting the RF signals in a form of millisecond AC pulses with the metal electrode and coupling said pulses in the body of the user;
switching said microelectronic sensor to the transistor sensing mode for recording electrical signals combined with the reflected RF signals received from the body of the user in a form of a source-drain electric current of the transistor over time (defined as IDs dynamics) with said microelectronic sensor;
transmitting the recorded signals from said microelectronic sensor to a user interface, server, remote storage, internet storage or biometric authentication cloud for further processing; and
processing the transmitted signals, correlating and comparing said IDs dynamics with pre-calibrated and stored biometric data of the user, thereby biometrically authenticating the user.

### Claim 7 (depends on 6)

The method of claim 6, wherein the emitted AC pulses are in the range of 100 MHz to 100 GHz frequency domain on a signal line through the body of the user.

### Claim 8 (depends on 6)

The method of claim 6, wherein the grounds of the metal electrode and of the transistors are connected.

### Claim 9 (depends on 6)

The method of claim 6, wherein said multilayer hetero-junction structure comprises:
A. (i) one top AlGaN layer recessed in an open gate area of the transistor to the thickness of 5-9 nm and having the surface roughness of 0.2 nm or less, and (ii) one bottom GaN buffer layer; said layers have Ga-face polarity, thus forming the two-dimensional electron gas (2DEG) conducting channel in said GaN layer, close to the interface with said AlGaN layer; or
B. (i) one top GaN layer recessed in an open gate area of the transistor to the thickness of 5-9 nm and having the surface roughness of 0.2 nm or less, (ii) one bottom GaN buffer layer, and (iii) one AlGaN barrier layer in between; said layers have Ga-face polarity, thus forming a two-dimensional hole gas (2DHG) conducting channel in the top GaN layer, close to the interface with said AlGaN barrier layer; or
C. (i) one top GaN layer recessed in an open gate area of the transistor to the thickness of 5-9 nm and having the surface roughness of 0.2 nm or less, (ii) one bottom GaN buffer layer, and (iii) one AlGaN barrier layer in between; said layers have N-face polarity, thus forming a two-dimensional electron gas (2DEG) conducting channel in the top GaN layer, close to the interface with said AlGaN barrier layer; or
D. (i) one top AlGaN layer recessed in an open gate area of the transistor to the thickness of 5-9 nm and having the surface roughness of 0.2 nm or less, and (ii) one bottom GaN buffer layer; said layers have N-face polarity, thus forming a two-dimensional hole gas (2DHG) conducting channel in the GaN buffer layer, close to the interface with said AlGaN barrier layer.

### Claim 10 (depends on 6)

The method of claim 6, wherein the source and drain contacts of the transistor are ohmic.

### Claim 11 (depends on 6)

The method of claim 6, wherein the electrical metallisations of the transistor are capacitively-coupled to the 2DEG or 2DHG conducting channel for inducing displacement currents, thus resulting in said source and drain contacts being non-ohmic.

### Claim 12 (depends on 6)

The method of claim 6, wherein the transistor further comprises a dielectric layer deposited on top of the multilayer hetero junction structure of the transistor and under the metal electrode.

### Claim 13 (depends on 6)

The method of claim 6, wherein said substrate is GaN having a thickness of 0.5-2 μm.

### Claim 14 (depends on 6)

The method of claim 6, wherein the thickness of the top layer of the transistor in the open gate area is 6-7 nm.

### Claim 15 (depends on 14)

The method of claim 14, wherein the thickness of said top layer in said open gate area is 6.2 nm to 6.4 nm.

### Claim 16 (depends on 6)

The method of claim 6, wherein the metal gate electrode is connected to the source contact for discharging and allowing a fine tuning of the microelectronic sensor gain by changing voltage (VDS).

### Claim 17 (depends on 16)

The method of claim 16, wherein the connection of said metal gate electrode to said source contact is high-ohmic and established via a capacitor for preventing the strong signal decay.

### Claim 18 (depends on 6)

The method of claim 6, wherein the metal gate electrode is external and common for each of the transistors in said microelectronic sensor and either placed on said transistors or mechanically suspended over said transistors at a height of 10-100 nm, without physical contact with said transistors.

### Claim 19 (depends on 6)

The method of claim 6, wherein said user interface is a smartphone, smartwatch, mobile device, personal electronic gadget, or desktop computer.

### Claim 20 (depends on 6)

The method of claim 6, wherein said microelectronic sensor further comprises:
a voltage source connected to the electrical contact lines of the transistors via an electric circuit for supplying electric current to said transistors;
an integrated or complementary metal-oxide-semiconductor (CMOS) current amplifier connected to said voltage source for amplification of an electric current obtained from said transistors;
an analogue-to-digital converter (ADC) with in-built digital input/output card connected to said current amplifier for outputting a converted signal to a user interface with or without any direct skin-contact; and
a connection module for connecting the microelectronic sensor to the user interface.

### Claim 21 (depends on 20)

The method of claim 20, wherein the connection module is a wireless communication module, selected from:
a short-range Bluetooth or near-field communication (NFC) providing wireless connection between the wearable device and a smartphone, smartwatch or to any other available personal gadget for up to 20 m, Wi-Fi providing the wireless connection in the range up to 200 m, or
Global system for mobile communications (GSM) providing worldwide communication to the biometric authentication cloud.

### Claim 22 (depends on 20)

The method of claim 20, wherein the converted signal is outputted to the user interface either with or without any direct skin-contact.

### Claim 23 (depends on 6)

The method of claim 6, wherein said microelectronic sensor is connected to a frame or chassis or to capacitive sensitive display elements of a smartphone, smartwatch or personal electronic gadget, and said smartphone, smartwatch or personal electronic gadget are capable of transducing an electrical charge to said microelectronic sensor.

### Claim 24 (depends on 6)

The method of claim 6, wherein said microelectronic sensor is a fingerprint sensor within a smartphone lock or a car lock, or the microelectronic sensor for bio-vital hemodynamic monitoring of a car driver for the purpose of determining the sleepiness, tiredness, nervousness, cardio risk, stress, or other conditions dangerous for driving a car.