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US 10,944,930 B2Granted
Solid-state image sensor with high-permittivity material film and a light shielding section, method for producing solid-state image sensor, and electronic apparatus
AssigneeSony Corporation
InventorsTomohiro Ohkubo, Suzunori Endo
Life of this patent
Estimating the term…
Abstract
A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.
Claims9
A solid-state image sensor comprising:
- a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element;
- a high-permittivity material film, wherein the high-permittivity material film is at least partially disposed on a light incident surface side of the semiconductor substrate and in a groove formed in the semiconductor substrate in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate;
- and
- a light shielding section having an embedded section formed in the high-permittivity material film and extending into the groove formed in the semiconductor substrate in at least the region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.
1 more element
A method for producing a solid-state image sensor comprising:
- forming, on a semiconductor substrate, a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element;
- forming a groove in the semiconductor substrate in a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate;
- forming a high-permittivity material film on a light incident surface side of the semiconductor substrate and in the groove formed between the photoelectric conversion element and the charge retaining section of the semiconductor substrate;
- and
- forming a light shielding section having an embedded section in the high-permittivity material film and extending into the groove formed in the semiconductor substrate in at least the region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.
2 more elements
An electronic apparatus comprising:
- a solid-state image sensor including a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element;
- a high-permittivity material film, wherein the high-permittivity material film is at least partially disposed on a light incident surface of the semiconductor substrate and in a groove formed in the semiconductor substrate in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate;
- and
- a light shielding section having an embedded section formed in the high-permittivity material film and extending into at least the region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.
1 more element
Dependencies are inferred from the claim text.