Integrated circuits and semiconductor device including standard cell
AssigneeSamsung Electronics Co., Ltd.
InventorsJinwoo Jeong, Jiwook Kwon, Sutae Kim, Hyelim Kim
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AssigneeSamsung Electronics Co., Ltd.
InventorsJinwoo Jeong, Jiwook Kwon, Sutae Kim, Hyelim Kim
Estimating the term…
A semiconductor device including first and second active regions extending in a first direction; a field region between the first and second active regions; a gate structure including an upper gate electrode overlapping the first active region and extending in a second direction crossing the first direction, and a lower gate electrode overlapping the second active region, extending in the second direction, and on a same line as the upper gate electrode; a gate isolation layer between the upper and lower gate electrodes; source/drain regions on respective sides of the upper gate electrode; a contact jumper crossing the upper gate electrode in the first active region and electrically connecting the source/drain regions; and a first upper contact extending in the second direction in the field region and overlapping the lower gate electrode and the gate isolation layer, wherein the upper gate electrode is a dummy gate electrode.
A semiconductor device, comprising:
An integrated circuit comprising a standard cell, wherein the standard cell includes:
An integrated circuit comprising a standard cell, wherein the standard cell includes:
Dependencies are inferred from the claim text.