Ultra-high sensitivity dual-gated biosensor based on MOS transistor

A biosensor based on an MOS transistor, comprising:

• a detection system and a micro-channel system bonded to each other, wherein the detection system comprises a substrate and an ion implantation layer tiled above the substrate;
• wherein,
• two groups of opposed U-shaped electrode pairs are arranged on the ion implantation layer;
• two wings of each U-shaped electrode pair are a source electrode and a drain electrodes, a top gate is connected to a bottom of the each U-shaped electrode pairs, and a surface gate, parallel to the top gate and not connected to the each U-shaped electrode pair, is provided within the each U-shaped electrode pair;
• the source electrode and the drain electrode are each in turn made up of a silicon layer, an oxidation layer and a metal layer above the ion implantation layer;
• silicon nanowires are connected to the source electrode and the drain electrode at the bottom of the each U-shaped electrode pair;
• each silicon nanowire is constructed by ultraviolet lithography and NLD etching;
• the each silicon nanowire has a length ranging from 10 nm to 100 μm, a width ranging from 10 nm to 5 μm, and a thickness ranging from 10 nm to 500 μm;
• the source electrode, the drain electrodes, the surface gate and the top gate of the each U-shaped electrode pair are all wrapped with a passivation layer, and only ends of the source electrode, the drain electrodes, the surface gate, the top gate and the silicon nanowires are exposed.