Scanning electron microscope and method for determining crystal orientations

A scanning electron microscope (SEM) comprising:

• a plurality of detecting units which detect backscattered electrons scattered by a specimen;
• a scanning deflector for scanning the specimen with an electron beam;
• an intensity pattern information generating unit which generates a line profile based on intensities of a plurality of detection signals output from the plurality of detecting units;
• and
• a line profile analyzing unit which specifies a crystal orientation based on the line profile,
• wherein the plurality of detecting units are constituted by a segmented detector having a plurality of first to n-th detection regions which are arranged to be rotationally symmetric around an optical axis,
• the segmented detector has a through-hole for allowing the electron beam to pass and travel along the optical axis.

An analysis method comprising:

• using a scanning electron microscope (SEM) to detect backscattered electrons scattered by a specimen with a plurality of detecting units;
• generating, based on intensities of a plurality of detection signals output from the plurality of detecting units, intensity pattern information that represents the intensities of the plurality of detection signals as a pattern;
• analyzing the intensity pattern information associated with an incidence position of the electron beam with respect to the specimen;
• and
• generating a pattern analysis image which indicates a distribution of crystal orientations of the specimen based on an analysis result by a pattern analyzing unit,
• wherein the plurality of detecting units are constituted by a segmented detector having a plurality of first to n-th detection regions which are arranged to be rotationally symmetric around an optical axis,
• the segmented detector has a through-hole for allowing the electron beam to pass and travel along the optical axis,
• first to n-th detection signals are output from the first to n-th detection regions, respectively, and
• the pattern of the intensity pattern information is formed by plotting intensities of the first to n-th detection signals on intensity axes of the first to n-th detection signals, respectively.

An analysis method, comprising:

• using a scanning electron microscope (SEM) to detect backscattered electrons scattered by a specimen with a plurality of detecting units;
• generating a line profile based on intensities of detection signals output from the plurality of detecting units;
• and
• specifying a crystal orientation based on the line profile,
• wherein the plurality of detecting units are constituted by a segmented detector having a plurality of first to n-th detection regions which are arranged to be rotationally symmetric around an optical axis,
• the segmented detector has a through-hole for allowing the electron beam to pass and travel along the optical axis.