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US 10,923,626 B2Granted
LED sidewall processing to mitigate non-radiative recombination
OwnerDavid P. Bour, Dmitry S. Sizov +2inventors
InventorsDavid P. Bour, Dmitry S. Sizov, Daniel A. Haeger, Xiaobin Xin
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Abstract
LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.
Claims17
A light emitting structure comprising:
- a body including:
- a first cladding layer doped with a first dopant type;
- a barrier layer;
- and
- an active layer between the first cladding layer and the barrier layer;
- a pillar structure that protrudes from a first surface of the body, wherein the pillar structure includes a second cladding layer doped with a second dopant type opposite the first dopant type;
- a center vertical axis that extends through the body and pillar structure;
- and
- a current confinement region dopant concentration of the second dopant type characterized by a vertical depth that extends from the first surface of the body and through the barrier layer, the active layer, and into the first cladding layer, while additionally encroaches from sidewalls of the body including the barrier layer, the active layer, and at least a portion of the first cladding layer toward the center vertical axis.
6 more elements
Dependencies are inferred from the claim text.