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US 10,917,072 B2Granted
Split ladder acoustic wave filters
AssigneeResonant Inc.
InventorsSean McHugh, Gregory L. Hey-Shipton, Garrett Williams
Life of this patent
Estimating the term…
Abstract
Filter devices and methods of fabricating filter devices. A filter device includes a first chip and a second chip. The first chip has a first material stack and contains one or more series resonators of a ladder filter circuit. The second chip has a second material stack and contains one or more shunt resonators of the ladder filter circuit. The first material stack and the second material stack are different.
Claims18
A filter device comprising:
- a first chip having a first material stack, the first chip containing one or more series resonators of a ladder filter circuit;
- and
- a second chip having a second material stack, the second chip containing one or more shunt resonators of the ladder filter circuit, wherein
- the one or more series resonators and the one or more shunt resonators are non-bonded SAW (surface acoustic wave) resonators, and
- the first material stack and the second material stack differ in one or more of:
- a material of a piezoelectric plate,
- a thickness of the piezoelectric plate,
- an orientation of the crystalline axes of the piezoelectric plate,
- a material a conductor pattern formed over the piezoelectric plate,
- a thickness of the conductor pattern,
- a material of a dielectric layer formed over the conductor pattern, and
- a thickness of the dielectric layer.
9 more elements
A filter device comprising:
- a first chip having a first material stack, the first chip containing one or more series resonators of a ladder filter circuit and
- a second chip having a second material stack, the second chip containing one or more shunt resonators of the ladder filter circuit, wherein
- the one or more series resonators and the one or more shunt resonators are bonded-wafer resonators, and
- the first material stack and the second material stack differ in one or more of:
- a material of a base,
- a thickness of the base,
- a material of a dielectric layer between the base and a piezoelectric wafer,
- a thickness of the dielectric layer between the base and a piezoelectric wafer,
- a material of the piezoelectric wafer,
- a thickness of the piezoelectric wafer,
- an orientation of the crystalline axes of the piezoelectric wafer,
- a material of a conductor pattern formed over the piezoelectric wafer,
- a thickness of the conductor pattern,
- a material of a dielectric layer formed over the conductor pattern, and
- a thickness of the dielectric layer formed over the conductor pattern.
12 more elements
A filter device comprising:
- a first chip having a first material stack, the first chip containing one or more series resonators of a ladder filter circuit;
- and
- a second chip having a second material stack, the second chip containing one or more shunt resonators of the ladder filter circuit, wherein
- the one or more series resonators and the one or more shunt resonators are floating diaphragm resonators, each floating diaphragm resonator comprising:
- a piezoelectric wafer, a portion of the piezoelectric wafer forming a diaphragm floating over a cavity formed in a base;
- and
- a conductor pattern including an interdigital transducer (IDT) formed on a surface of the piezoelectric wafer, interleaved fingers of the IDT disposed on the diaphragm, and
- the first material stack and the second material stack differ in one or more of:
- a material of a base,
- a thickness of the base,
- a material of a dielectric layer between the base and a piezoelectric wafer,
- a thickness of the dielectric layer between the base and the piezoelectric,
- a material of the piezoelectric wafer,
- a thickness of the piezoelectric wafer,
- an orientation of the crystalline axes of the piezoelectric wafer,
- a material of a conductor pattern formed over the piezoelectric wafer,
- a thickness of the conductor pattern,
- a material of a dielectric layer formed over the conductor pattern, and
- a thickness of the dielectric layer formed over the conductor pattern.
16 more elements
A filter device comprising:
- a first chip having a first material stack, the first chip containing one or more series resonators of a ladder filter circuit;
- and a second chip having a second material stack, the second chip containing one or more shunt resonators of the ladder filter circuit, wherein
- the one or more series resonators and the one or more shunt resonators are solidly-mounted membrane resonators, and
- the first material stack and the second material stack differ in one or more of:
- a material of a base,
- a thickness of the base,
- a number of layers in an acoustic Bragg reflector disposed between the base and a piezoelectric wafer and the material and thickness of each layer,
- a thickness of the dielectric layer between the base and the piezoelectric,
- a material of the piezoelectric wafer,
- a thickness of the piezoelectric wafer,
- an orientation of the crystalline axes of the piezoelectric wafer,
- a material of a conductor pattern formed over the piezoelectric wafer,
- a thickness of the conductor pattern,
- a material of a dielectric layer formed over the conductor pattern, and
- a thickness of the dielectric layer formed over the conductor pattern.
12 more elements
A filter device comprising:
- a first chip having a first material stack, the first chip containing one or more series resonators of a ladder filter circuit;
- and
- a second chip having a second material stack, the second chip containing one or more shunt resonators of the ladder filter circuit, wherein
- the one or more series resonators are bonded-wafer resonators, and
- the one or more shunt resonators are non-bonded SAW resonators.
2 more elements
A duplexer including a transmit ladder filter circuit and a receive ladder filter circuit, comprising:
- a first chip having a first material stack, the first chip containing series resonators of the transmit ladder filter circuit and the receive ladder filter circuit;
- and
- a second chip having a second material stack, the second chip containing shunt resonators of the receive filter circuit and the transmit ladder filter circuit,
- wherein the first material stack and the second material stack are different.
1 more element
A duplexer including a transmit ladder filter circuit and a receive ladder filter circuit, comprising:
- a first chip having a first material stack, the first chip containing series resonators of the transmit ladder filter circuit, and
- a second chip having a second material stack, the second chip containing shunt resonators of the transmit ladder filter circuit and all resonators of the receive filter circuit,
- wherein the first material stack and the second material stack are different.
Dependencies are inferred from the claim text.