Method and apparatus to correct for patterning process error

A method comprising:

• obtaining a measurement result of a pattern provided to, and/or a simulation result for the pattern to be provided to, an area of a substrate, the pattern provided, or to be provided, by using a mask in a patterning system;
• determining an error between the pattern and a target pattern;
• and
• creating, by a hardware computer system and based on the error, modification information for physically modifying the mask,
• wherein the error is converted to a correctable error and/or reduced to a certain range, when the mask is modified according to the modification information.

A non-transitory computer program product comprising machine-readable instructions therein, the instructions, upon execution by a processor system, configured to cause the processor system to at least:

• obtain a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system;
• determine a patterning error due to an etch loading effect based on the measurement and/or simulation result and on data pertaining to the pattern prior to being processed by the etch tool, the etch-loading effect indicating that an etch rate of the etch tool depends on a quantity of material to be etched;
• and
• create, based on the patterning error, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool,
• wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

A non-transitory computer program product comprising machine-readable instructions therein, the instructions, upon execution by a processor system, configured to cause the processor system to at least:

• obtain a measurement result of a pattern provided to, and/or a simulation result for the pattern to be provided to, an area of a substrate, the pattern provided, or to be provided, by using a mask in a patterning system;
• determine an error between the pattern and a target pattern;
• and
• create, based on the error, modification information for physically modifying the mask,
• wherein the error is converted to a correctable error and/or reduced to a certain range, when the mask is modified according to the modification information.