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US 10,915,021 B2Granted
Monomer, polymer, resist composition, and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsMasahiro Fukushima, Koji Hasegawa, Jun Hatakeyama
Life of this patent
Estimating the term…
Abstract
A monomer having formula (A) is provided. RA is H, methyl or trifluoromethyl, X1 is a single bond, ether, ester or amide bond, Ra is a C1-C20 monovalent hydrocarbon group, Rb is H or an acid labile group, X is halogen, n is an integer of 1 to 4, m is an integer of 0 to 3, and 1≤n+m≤4. A resist composition comprising a polymer derived from the monomer has a high sensitivity to high-energy radiation, especially EUV.
Claims15
A monomer having the formula (A):
- wherein RA is hydrogen, methyl or trifluoromethyl, X1 is a single bond, Ra is a C1-C20 monovalent hydrocarbon group in which any constituent methylene moiety may be replaced by an ether bond or carbonyl moiety, where at least two Ra are included, two adjacent Ra may bond together to form an alicyclic structure with the carbon atoms to which they are attached, Rb is hydrogen or an acid labile group, X is iodine, n and m are integers in the range:
- 1≤n≤4, 0≤m≤3, and 1≤n+m≤4.
A polymer comprising recurring units having a partial structure represented by the formula (B) on a side chain,
- wherein X1 is a single bond, Ra is a C1-C20 monovalent hydrocarbon group in which any constituent methylene moiety may be replaced by an ether bond or carbonyl moiety, where at least two Ra are included, two adjacent Ra may bond together to form a ring with the carbon atoms to which they are attached, Rb is hydrogen or an acid labile group, X is iodine, n and m are integers in the range:
- 1≤n≤4, 0≤m≤3, and 1≤n+m≤4, the broken line denotes a valance bond to a polymer backbone.
Dependencies are inferred from the claim text.