Computer implemented method for determining intrinsic parameter in a stacked nanowires MOSFET

A computer implemented method for designing an integrated circuit that includes a stacked nanowires/nanosheets gate-all-around (GAA) metal oxide semiconductor field effect transistor (MOSFET) comprising Nw nanowires and/or nanosheets, each nanowire/nanosheet being surrounded in an oxide layer, the oxide layers being embedded in a common gate, wherein the method comprises the following steps:

• determining at least one intrinsic parameter of the stacked nanowires/nanosheets gate-all-around (GAA) metal oxide semiconductor field effect transistor (MOSFET) by:
• measuring by at least one imaging method using a microscopy device the following geometrical parameters of the MOSFET:
• the number of stacked nanowires/nanosheets NW,
• the width WW,i, of the nanowire/nanosheet number i, i being an integer from 1 to NW,
• the thickness of the nanowire/nanosheet HW,i, number i, i being an integer from 1 to NW,
• the corner radius RW,i of the nanowire/nanosheet number i, i being an integer from 1 to NW, RW,i;
• calculating, using a physical processor and the measured geometrical parameters, a surface potential x normalized by a thermal voltage ϕT given by ϕT=kBT/q;
• measuring electrically the total gate capacitance for a plurality of gate voltages;
• determining, using the measured total gate capacitance and the calculated normalized surface potential, the at least one intrinsic parameter of the stacked nanowires/nanosheets MOSFET,
• reproducing, based on said at least one intrinsic parameter, electrical characteristics in all biasing of the stacked nanowires/nanosheets gate-all-around (GAA) metal oxide semiconductor field effect transistor (MOSFET),
• determining electrical properties of the integrated circuit based on the reproduced electrical characteristics, and
• optimizing a device architecture of the integrated circuit with regard to consumption, performance and surface technology targets based on the determined electrical properties.