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US 10,910,503 B1Granted
Semiconductor detectors with butt-end coupled waveguide and method of forming the same
AssigneeGlobalfoundries Inc.
InventorsYusheng Bian, Ajey Poovannummoottil Jacob
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Abstract
The present disclosure generally relates to semiconductor detectors for use in optoelectronic/photonic devices and integrated circuit (IC) chips, and methods for forming same. The present disclosure also relates to photodetectors integrated with waveguide stacks, more particularly, photodetectors with butt-end coupled waveguides. The present disclosure also relates to methods of forming such structures.
Claims20
A semiconductor device comprising:
- a substrate;
- a semiconductor layer having a waveguide section and an adjoining active section above the substrate;
- a semiconductor detector disposed on the active section of the semiconductor layer, the semiconductor detector having a front facet;
- a dielectric layer disposed over the semiconductor detector;
- and
- a waveguide structure above the waveguide section of the semiconductor layer and adjacent to the semiconductor detector, the waveguide structure having an end facet that faces the front facet of the semiconductor detector;
- wherein the dielectric layer is between the end facet of the waveguide structure and the front facet of the semiconductor detector.
4 more elements
A semiconductor device comprising:
- a substrate;
- a semiconductor layer having a waveguide section and an adjoining active section above the substrate;
- a semiconductor detector disposed on the active section of the semiconductor layer;
- a dielectric layer disposed over the semiconductor detector;
- and
- a plurality of waveguide structures that are vertically stacked above the waveguide section of the semiconductor layer and adjacent to the semiconductor detector, wherein the dielectric layer extends above the waveguide section of the semiconductor layer and in between a pair of waveguide structures in the vertical stack.
3 more elements
A semiconductor device comprising:
- a substrate;
- a semiconductor layer having a waveguide section and an adjoining active section above the substrate;
- a semiconductor detector disposed on the active section of the semiconductor layer;
- a dielectric layer disposed over the semiconductor detector;
- and
- a plurality of waveguide structures that are vertically stacked above the waveguide section of the semiconductor layer and adjacent to the semiconductor detector, wherein the dielectric layer extends to lie between the waveguide section of the semiconductor layer and the vertically stacked waveguide structures.
3 more elements
Dependencies are inferred from the claim text.