Copper plasma etching method and manufacturing method of display panel
AssigneesSamsung Display Co., Ltd., Korea University Research and Business Foundation, Sejong Campus
InventorsSang Gab Kim, MunPyo Hong, Hyun Min Cho, Seong Yong Kwon, Ho Won Yoon
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Abstract
A copper plasma etching method according an exemplary embodiment includes: placing a substrate on a susceptor in a process chamber of a plasma etching apparatus; supplying an etching gas that include hydrogen chloride into the process chamber; plasma-etching a conductor layer that include copper in the substrate; and maintaining a temperature of the susceptor at 10° C. or less during the plasma-etching.
Claims20
A copper plasma etching method comprising:
- placing a substrate comprising a copper layer on a susceptor in a process chamber of a plasma etching apparatus;
- supplying an etching gas that comprises hydrogen chloride into the process chamber;
- plasma-etching the copper layer on the substrate;
- and
- maintaining a temperature of the susceptor at less than about 10° C. during the plasma-etching,
- wherein the etching gas further comprises H2 gas, and wherein a flow rate ratio of the H2 gas with respect to hydrogen chloride is about 0.5:1 or less, and
- wherein the plasma-etching is performed for about 120 seconds to about 300 seconds.
A copper plasma etching method comprising:
- placing a substrate comprising a conductive layer that comprises copper on a susceptor in a process chamber of a plasma etching apparatus;
- supplying an etching gas that comprises hydrogen chloride into the process chamber;
- plasma-etching the conductive layer that comprises copper on the substrate;
- and
- maintaining a temperature of the susceptor at about 10° C. or less during the plasma-etching,
- wherein the etching gas further comprises H2 gas, and wherein a flow rate ratio of the H2 gas with respect to hydrogen chloride is about 0.5:1 or less,
- wherein the plasma-etching is performed for about 120 seconds to about 300 seconds, and
- wherein the plasma-etching comprises the following reaction stages:
- 1st reaction stage:
- Cu+Cl→CuCl(s)
- 2nd reaction stage:
- CuCl+Cl→CuCl2(s)
- 3rd reaction stage:
- CuCl2+3H→CuH(g)+2HCl(g)
- 3CuCl2+3H→Cu3Cl3(g)+3HCl(g)
- 3CuCl2+3/2H2→Cu3Cl3(g)+3HCl(g).
A display panel manufacturing method comprising:
- forming a conductive layer that comprises copper on a substrate;
- placing the substrate on which the conductive layer is formed on a susceptor in a process chamber of a plasma etching apparatus;
- supplying an etching gas that comprises hydrogen chloride into the process chamber;
- plasma-etching the conductive layer;
- and
- maintaining a temperature of the susceptor at about 10° C. or less during the plasma-etching,
- wherein the etching gas further comprises H2 gas, and wherein a flow rate ratio of the H2 gas with respect to hydrogen chloride is about 0.5:1 or less,
- wherein the plasma-etching is performed for about 120 seconds to about 300 seconds, and
- wherein the plasma-etching of the conductive layer comprises forming a data line, a source electrode, and a drain electrode.
Dependencies are inferred from the claim text.