Apparatus and method for online and real-time detection of temperature of epitaxial wafer

An apparatus for online and real-time detection of a temperature of an epitaxial wafer, comprising a MOCVD reaction chamber, a light source, a beam splitter, a reference light detector, a reflected light detector and a data acquisition unit, wherein,

• the MOCVD reaction chamber is provided with a graphite susceptor therein, the graphite susceptor being able to rotate and used to bear the epitaxial wafer, and a top of the MOCVD reaction chamber is provided with a reaction chamber window for enabling light to pass therethrough;
• the light source is configured to generate a light beam;
• the beam splitter is configured to split the light beam received from the light source into two beams, and wherein one of the two beams after entering the reference light detector, forms a first path of electrical signal, and the other of the two beams passes through the reaction chamber window and then strikes on the epitaxial wafer and forms a reflected light beam after being reflected by the epitaxial wafer, the reflected light beam forming a second path of electrical signal after passing through the reflected light detector;
• and
• the data acquisition unit is configured to acquire the first path of electrical signal and the second path of electrical signal.